1.

国際会議録
国際会議録
1. Raman Determination of Stresses and Strains in 3C-SiC Films Grown on 6-Inch Si Substrates
Hagiwara,C. ; Itoh,K.M. ; Muto,J. ; Nagasawa,H. ; Yagi,K. ; Harirna,H. ; Mizoguchi,K. ; Nakashima,S.
出版情報: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.669-672,  1998.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 264-268
2.

国際会議録
国際会議録
2. Isotopic shifts of the rotational states of interstitial oxygen in germanium
Aichele,N. ; Gommel,U. ; K.Laｦﾂmann ; Maier,F. ; Zeller,F. ; Haller,E.E. ; Itoh,K.M. ; Khirunenko,L.I. ; Shakhovtsov,V.I. ; Pajot,B. ; Fogarassy,E. ; Mtissig,H.
出版情報: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part1  pp.47-52,  1997.  Zurich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 258-263
3.

国際会議録
国際会議録
3. Ionized impurity scattering in isotopically engineered,compensated Ge:Ga,As
Itoh,K.M. ; Kinoshita,T. ; Walukiewicz,W. ; Beeman,J.W. ; Haller,E.E. ; Muto,J. ; Farmer,J.W. ; Ozhogin,V.I.
出版情報: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part1  pp.77-82,  1997.  Zurich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 258-263
4.

国際会議録
国際会議録
4. Calculation of the Anisotropy of the Hall Mobility in n-Type 4H- and 6H-SiC
Kinoshita,T. ; Itoh,K.M. ; Muto,J. ; Schadt,M. ; Pensl,G. ; Takeda,K.
出版情報: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.295-298,  1998.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 264-268
5.

国際会議録
国際会議録
5. Electric Field Broadening of Gallium Acceptor States in Compensated Ge:Ga,As
Itoh,K.M. ; Walukiewicz,W. ; Beeman,J.W. ; Haller,E.E. ; Kim,H.-J. ; Mayur,A.J. ; Sciacca,M.D. ; Ramdas,A.K. ; Buczko,R. ; Farmer,J.W. ; Ozhogin,V.I.
出版情報: Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995.  pp.127-132,  1995.  Zurich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 196-201