1.

国際会議録
国際会議録
1. Effect of Nitrogen Doping on the Formation of Planar Defects in 4H-SiC
Siche, D. ; Albrecht, M. ; Doerschel, J. ; Irmscher, K. ; Rost, H. J. ; Rossberg, M. ; Schulz, D.
出版情報: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.39-42,  2005.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 483-485
2.

国際会議録
国際会議録
2. Pairing Reactions between Substitutional and Interstitial Defects Caused by the Same Transition Metal in Silicon Float Zone Crystals
Lemke, H. ; Irmscher, K.
出版情報: High purity silicon VIII : proceedings of the international symposium.  pp.146-159,  2004.  Pennington, N.J..  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 2004-05
3.

国際会議録
国際会議録
3. Study of Nitrogen Incorporation in 6H-SiC Single Crystals Grown by PVT
Schulz, D. ; Irmscher, K. ; Dolle, J. ; Eiserbeck, W. ; Muller, T. ; Rost, H. -J. ; Siche, D. ; Wagner, G. ; Wollweber, J.
出版情報: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.87-90,  2000.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 338-342(1)
4.

国際会議録
国際会議録
4. Investigation of Silicon Carbide Physical Vapor Transport Growth on the C-Terminated Face of 6H Seeds
Schulz, D. ; Doerschel, J. ; Irmscher, K. ; Rost, H.-J. ; Siche, D. ; Wollweber, J.
出版情報: Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 640
5.

国際会議録
国際会議録
5. Aluminum Incorporation into 4H-SiC Layers during Epitaxial Growth in a Hot-Wall CVD System
Wagner, G. ; Leitenberger, W. ; Irmscher, K. ; Schmid, F. ; Laube, M. ; Pensl, G.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.207-210,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
6.

国際会議録
国際会議録
6. Analysis of Different Vanadium Charge States in Vanadium Doped 6H-SiC by Low Temperature Optical Absorption and Electron Paramagnetic Resonance
Bickermann, M. ; Irmscher, K. ; Epelbaum, B.M. ; Winnacker, A.
出版情報: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.787-790,  2004.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 457-460
7.

国際会議録
国際会議録
7. Aluminum Incorporation into 4H-SiC Layers during Epitaxial Growth in a Hot-Wall CVD System
Wagner, G. ; Leitenberger, W. ; Irmscher, K. ; Schmid, F. ; Laube, M. ; Pensl, G.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.207-210,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
8.

国際会議録
国際会議録
8. Deep Levels in As-Grown 4H-SiC Epitaxial Layers and their Correlation with CVD Parameters
Pintilie, I. ; Pintilie, L. ; Irmscher, K. ; Thomas, B.
出版情報: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.463-466,  2003.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 433-436
9.

国際会議録
国際会議録
9. Properties of Nitrogen-Doped 4H-SiC Single Crystals Grown by Physical Vapor Transport
Rost, H.-J. ; Irmscher, K. ; Doerschel, J. ; Siche, D. ; Schulz, D. ; Wollweber, J.
出版情報: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.91-94,  2003.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 433-436
10.

国際会議録
国際会議録
10. Influence of the Growth Conditions on the Layer Parameters of 4H-SiC Epilayers Grown in a Hot-Wall Reactor
Wagner, G. ; Irmscher, K.
出版情報: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.95-98,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 353-356