1.

国際会議録
国際会議録
1. High-frequency EPR studies of shallow and deep boron acceptors in 6H-SiC.(Invited)
Schmidt,J. ; Matsumoto,T. ; Poluektov,O.G. ; Arnold,A. ; Ikoma,T. ; Baranov,P.G. ; Mokhov,E.N.
出版情報: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part2  pp.703-708,  1997.  Zurich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 258-263
2.

国際会議録
国際会議録
2. High-Frequency EPR Studies of Shallow and Deep Boron Acceptors in 6H-SiC
Schmidt,J. ; Matsumoto,T.M. ; Poiuektov,O.G. ; Duijn-Arnold,A.van ; Ikoma,T. ; Baranov,P.G. ; Mokhov,E.N.
出版情報: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.587-590,  1998.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 264-268
3.

国際会議録
国際会議録
3. Defects induced by Reactive Ion Etching(RIE)in GaAs and Correlation with EL2
Ikoma,T. ; Hagihara,Y.
出版情報: Proceedings of the 15th International Conference on Defects in Semiconductors : Budapest, Hungary, August 22-26, 1988.  Part1  pp.67-72,  1989.  Aederlmannsdorf, Switzwelns.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 38-41