1.

国際会議録
国際会議録
1. CHARACTERIZATION OF GaSb-BASED ALLOY SEMICONDUCTORS
Uekita, H. ; Kitamura, N. ; Ichimura, M. ; Usami, A. ; Wada, T.
出版情報: Long-wavelength semiconductor devices, materials, and processes : symposium held November 26-29, 1990, Boston, Massachusetts, U.S.A..  pp.169-174,  1991.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 216
2.

国際会議録
国際会議録
2. Optical-Capacitance-Transient Spectroscopy Study for Deep Levels in 4H-SiC Epilayer Grown by Cold Wall Chemical Vapor Deposition
Kato, M. ; Tanaka, S. ; Ichimura, M. ; Arai, E. ; Nakamura, S. ; Kimoto, T.
出版情報: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.381-384,  2005.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 483-485
3.

国際会議録
国際会議録
3. Conductivity of LixMgyAlz(SO4)3 as a New Lithium Ionic Conductor for a Solid- State Cell
Shodai, T. ; Ohtsuka、H. ; Ichimura, M. ; Yamaki, J-i.
出版情報: Proceedings of the Symposium on Lithium Batteries.  pp.94-104,  1994.  Pennington, NJ.  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 1994-4
4.

国際会議録
国際会議録
4. Characterization Of Deep Levels In 3C-SiC By Optical Capacitance-Transient Spectroscopy
Nakakura, Y. ; Kato, M. ; Ichimura, M. ; Arai, E. ; Tokuda, Y.
出版情報: Defect and impurity engineered semiconductors and devices III : symposium held April 1-5, 2002, San Francisco, California, U.S.A..  pp.167-172,  2002.  Warrendale, Pa.  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 719
5.

国際会議録
国際会議録
5. Characteristics of Schottky Diodes on 6H-SiC Surfaces after Sacrificial Anodic Oxidation
Kato, M. ; Ichimura, M. ; Arai, E.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.933-936,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
6.

国際会議録
国際会議録
6. CONTACTLESS MEASUREMENTS OF SLIP LINES INTENTIONALLY INTRODUCED IN Si WAFERS DURING RAPID THERMAL PROCESSING
Usami, A. ; Shiraki, H. ; Fujiwara, H. ; Abe, R. ; Osamura, N. ; Ichimura, M. ; Wada, T.
出版情報: Rapid thermal and integrated processing : symposium held April 30-May 3, 1991, Anaheim, California, U.S.A..  pp.215-222,  1991.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 224
7.

国際会議録
国際会議録
7. Inverse TMR effect in Co0.9Fe0.1/SrTiO3/ La0.7Sr0.3MnO3 Tunnel Junctions
Sugiyama, M. ; Asano, H. ; Matsui, M. ; Hayakawa, J. ; Kokado, S. ; Itou, K. ; Sakuma, A. ; Ichimura, M.
出版情報: Spintronics : symposium held November 26-29, 2001, Boston, Massachusetts, U.S.A..  pp.29-34,  2002.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 690
8.

国際会議録
国際会議録
8. Novel "Photochemical Deposition" and Conventional "Electrochemical Deposition" of CdS and HgxCd1-xTe Thin Films and Their Characterization for Solar Cell Device Applications
Kumaresan, R. ; Ichimura, M. ; Babu, S. Moorthy ; Ramasamy, P.
出版情報: II-VI compound semiconductor photovoltaic materials : symposium held April 16-20, 2001, San Francisco, California, U.S.A..  2001.  Warrendale, PA.  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 668
9.

国際会議録
国際会議録
9. Characteristics of Schottky Diodes on 6H-SiC Surfaces after Sacrificial Anodic Oxidation
Kato, M. ; Ichimura, M. ; Arai, E.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.933-936,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
10.

国際会議録
国際会議録
10. Excess Carrier Lifetime Mapping for Bulk SiC Wafers by Microwave Photoconductivity Decay Method and Its Relationship with Structural Defect Distribution
Kato, M. ; Ichimura, M. ; Arai, E. ; Sumie, S. ; Hashizume, H.
出版情報: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.505-508,  2004.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 457-460