1.

国際会議録
国際会議録
1. Morphology Optimization of Very Thick 4H-SiC Epitaxial Layers
M. Yazdanfar ; P. Stenberg ; I.D. Booker ; Ivan.G Ivanov ; H. Pedersen
出版情報: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.251-254,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 740-742
2.

国際会議録
国際会議録
2. Radial Variation of Measured Carrier Lifetimes in Epitaxial Layers Grown with Wafer Rotation
J.P. Bergman ; I.D. Booker ; L. Lilja ; J. Hassan ; E. Janzén
出版情報: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.289-292,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 717-720
3.

国際会議録
国際会議録
3. Comparison of Post-Growth Carrier Lifetime Improvement Methods for 4H-SiC Epilayers
I.D. Booker ; J. Hassan ; A. Hallén ; E.Ö. Sveinbjörnsson ; O. Kordina
出版情報: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.285-288,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 717-720
4.

国際会議録
国際会議録
4. High-Resolution Time-Resolved Carrier Lifetime and Photoluminescence Mapping of 4H-SiC Epilayers
I.D. Booker ; J. Hassan ; E. Janzén ; J.P. Bergman
出版情報: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.293-296,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 717-720
5.

国際会議録
国際会議録
5. The Effect of Growth Conditions on Carrier Lifetime in N-Type 4H-SiC Epitaxial Layers
L. Lilja ; J. Hassan ; I.D. Booker ; J.P. Bergman ; E. Janzén
出版情報: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.161-164,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 717-720
6.

国際会議録
国際会議録
6. Influence of Growth Mechanism on Carrier Lifetime in On-Axis Homoepitaxial Layers of 4H-SiC
J. Hassan ; L. Lilja ; I.D. Booker ; J.P. Bergman ; E. Janzén
出版情報: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.157-160,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 717-720
7.

国際会議録
国際会議録
7. Comparison of Carrier Lifetime Measurements and Mapping in 4H SiC Using Time Resolved Photoluminscence and µ-PCD
B. Kallinger ; M. Rommel ; L. Lilja ; J. Ul Hassan ; I.D. Booker
出版情報: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.301-304,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 778-780
8.

国際会議録
国際会議録
8. Oxidation Induced ON1, ON2a/b Defects in 4H-SiC Characterized by DLTS
I.D. Booker ; H. Abdalla ; L. Lilja ; J. Ul Hassan ; P. Bergman
出版情報: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.281-284,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 778-780
9.

国際会議録
国際会議録
9. Influence of Growth Temperature on Carrier Lifetime in 4H-SiC Epilayers
L. Lilja ; J. ul Hassan ; I.D. Booker ; P. Bergman ; E. Janzén
出版情報: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.637-640,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 740-742