1.

国際会議録
国際会議録
1. The Effect of Oxygen on the Electrical Activation and Diffusion of Ion-Implanted Boron
Larsen, K. Kyllesbech ; Stolk, P. A. ; Privitera, V. ; Berkum, J. G. M. van ; Boer, W. B. de ; Mannino, G. ; Cowern, N. E. B. ; Huizing, H. G. A.
出版情報: Defects and diffusion in silicon processing : symposium held April 1-4, 1997, San Francisco, California, U.S.A..  pp.291-,  1997.  Pittsburg, Pa..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 469
2.

国際会議録
国際会議録
2. Low-Energy Implantation and Transient-Enhanced Diffusion: Physical Mechanisms and Technology Implications
Cowern, N. E. B. ; Collart, E. J. H. ; Politiek, J. ; Bancken, P. H. L. ; Berkum, J. G. M. van ; Larsen, K. Kyllesbech ; Stolk, P. A. ; Huizing, H. G. A. ; Pichler, P. ; Burenkov, A. ; Gravesteijn, D. J.
出版情報: Defects and diffusion in silicon processing : symposium held April 1-4, 1997, San Francisco, California, U.S.A..  pp.265-,  1997.  Pittsburg, Pa..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 469
3.

国際会議録
国際会議録
3. Ostwald Ripening of {113} Defects Precursors and Transient Enhanced Diffusion
Mannino, G. ; Cowern, N. E. B. ; Stolk, P. A. ; Roozeboom, F. ; Huizing, H. G. A. ; Berkum, J. G. M. van ; Boer, W. B. de ; Cristiano, F. ; Claverie, A. ; Jaraiz, M.
出版情報: Si front-end processing - physics and technology of dopant-defect interactions : symposium held April 6-9, 1999, San Francisco, California, U.S.A..  pp.163-,  1999.  Warrendale, PA.  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 568