1.

国際会議録
国際会議録
1. High-temperature behavior of fully-depleted SOI MOSFETs in case of charge instability of buried oxide
Nazarov, A.N. ; Houk, Y. ; Vovk, Ya.N. ; Lysenko, V.S. ; Flandre, D.
出版情報: Silicon-on-insulator technology and devices XII : proceedings of the international symposium.  pp.113-118,  2005.  Pennington, N.J..  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 2005-03
2.

国際会議録
国際会議録
2. Radiation effect on electrical properties of fully-depleted UNIBOND SOI MOSFETs
Houk, Y. ; Nazarov, A. N. ; Turchanikov, V. I. ; Lysenko, V. S. ; Adriaensen, S. ; Flandre, D.
出版情報: Science and technology of semiconductor-on-insulator structures and devices operating in a harsh environment.  pp.233-240,  2005.  Dordrecht.  Kluwer Academic Publishers
シリーズ名: NATO science series. Series 2, Mathematics, physics and chemistry
シリーズ巻号: 185