1.

国際会議録
国際会議録
1. 26 Tantalum-based Gate Electrode Metals for Advanced CMOS Devices
Hooker, J. C. ; Lander, R.J.P. ; Cubaynes, F. N. ; Schram, T. ; Roozeboom, F. ; van Zijl, J. ; Moos, M. ; van den Heuvel, F.C. ; Naburgh, E. ; van Berkum, J. G. M. ; Tamminga, Y. ; Dao, T. ; Henson, K. ; Schaekers, M. ; van Ammel, A. ; Tokei, Z. ; Demand, M. ; Dachs, C. (Invited Paper)
出版情報: Advanced gate stack, source/drain and channel engineering for Si-based CMOS, new materials, processes, and equipment : proceedings of the international symposium.  pp.215-224,  2005.  Pennington, NJ.  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 2005-05
2.

国際会議録
国際会議録
2. Structural Quality and Electrical Behavior of Epitaxial High-k Y2O3/Si(001)
Vellianitis, G. ; Apostolopoulos, G. ; Dimoulas, A. ; Argyropoulos, K. ; Mereu, B. ; Scholz, R. ; Alexe, M. ; Hooker, J. C.
出版情報: Crystalline oxide-silicon heterostructures and oxide optoelectronics : symposium held December 2-4, 2002, Boston, Massachusetts, U.S.A..  pp.177-182,  2003.  Warrendale, PA.  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 747