1.

国際会議録
国際会議録
1. THE EFFECT OF RAPID THERMAL PROCESSING ON THE ELECTRICAL CHARACTERISTICS OF POLYSILICON GATE MOS CAPACITORS
Felch, Susan B. ; Hodul, David T. ; Salimian, Mak
出版情報: Rapid thermal processing of electronic materials : symposium held April 21-23, 1987, Anaheim California, U.S.A..  pp.235-240,  1987.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 92
2.

国際会議録
国際会議録
2. SYNCHROTRON TOPOGRAPHIC STUDIES OF THE INFLUENCE OF RAPID THERMAL PROCESSING ON DEFECT STRUCTURES IN SINGLE CRYSTAL SILICON
Dudley, Michael ; Wang, Franklin F.Y. ; Fanning, Thomas ; Tolis, Georgios ; Wu, Jun ; Hodul, David T.
出版情報: Defects in materials : symposium held November 26-29, 1990, Boston, Massachusetts, U.S.A..  pp.511-516,  1991.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 209