1.

国際会議録
国際会議録
1. Electrical transport of an AlGaN/GaN two-dimensional electron gas
Saxler, A. ; Debray, P. ; Perrin, R. ; Elhamri, S. ; Mitchel, W. C. ; Elsass, C. R. ; Smorckkova, I. P. ; Heying, B. ; Haus, E. ; Fini, P. ; Ibbetson, J. P. ; Keller, S. ; Petroff, P. M. ; DenBaars, S. P. ; Mishra, U. K. ; Speck, J. S.
出版情報: GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A..  pp.W11.10.1-,  2000.  Warrendale, Pa..  MRS-Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 595
2.

国際会議録
国際会議録
2. Influence of Growth Parameters on the Deep Level Spectrum in MBE-Grown n-GaN
Arehart, A.R. ; Poblenz, C. ; Heying, B. ; Speck, J.S. ; Mishra, U.K. ; DenBaars, S.P. ; Ringel, S.A.
出版情報: GaN and related alloys - 2003 : symposium held December 1-5, 2003, Boston, Massachusetts, U.S.A..  pp.735-740,  2004.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 798
3.

国際会議録
国際会議録
3. Persistent Photoconductivity in a High Mobility two Dimensional Electron Gas in an AlGaN/GaN Heterostructure
Elhamri, S. ; Saxler, A. ; Cull, D. ; Mitchel, W.C. ; Elsass, C.R. ; Smorchkova, I. P. ; Heying, B. ; Poblenz, C. ; Fini, P. ; Keller, S. ; Petroff, P. M. ; DenBaars, S.P. ; Mishra, U. K. ; Speci, J. S.
出版情報: GaN and related alloys - 2000 : symposium held November 27-December 1, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 639
4.

国際会議録
国際会議録
4. X-Ray Diffraction Imaging of GaN-Based Heterostructures on SiC
Poust, B. ; Feichtinger, P. ; Sandhu, R. ; Smorchkova, I. ; Heying, B. ; Block, T. ; Wojtowicz, M. ; Goorsky, M.
出版情報: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1601-1604,  2004.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 457-460
5.

国際会議録
国際会議録
5. Effects of Crystallinity on Hydrogen Exfoliation of GaN Layers
Hayashi, S. ; Poust, B. ; Heying, B. ; Goorsky, M.S.
出版情報: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1605-1608,  2004.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 457-460