1.

国際会議録
国際会議録
1. Growth and Characterisation of Thick SiC Epilayers by High Temperature CVD
Ellison,A. ; Kimoto,T. ; Ivanov,I.G. ; Wahab,Q. ; Henry,A. ; Kordina,O. ; Zhang,J. ; Hemmingsson,C.G. ; Gu,C.-Yu. ; Leys,M.R. ; Janzen,E.
出版情報: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.103-106,  1998.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 264-268
2.

国際会議録
国際会議録
2. Observation of Metastable Defect in Electron Irradiated 6H-SiC
Hemmingsson,C.G. ; Son,N.T. ; Kordina,O. ; Lindstrom,J.L. ; Janzen,E.
出版情報: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.561-564,  1998.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 264-268
3.

国際会議録
国際会議録
3. High Growth Rate of α-SiC by Sublimation Epitaxy
Syvajarvi,M. ; Yakimova,R. ; MacMillan,M.F. ; Tuominen,M. ; Kakanakova-Georgieva,A. ; Hemmingsson,C.G. ; Ivanov,I.G. ; Janzen,E.
出版情報: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.143-146,  1998.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 264-268