1.

国際会議録
国際会議録
1. Characterization of Deep Level Defects in 4H and 6H SiC Via DLTS, SIMS and MeV E-Beam Irradiation
Doyle, J. P. ; Aboelfotoh, M. O. ; Linnarsson, M. K. ; Svensson, B. G. ; Schoner, A. ; Nordell, N. ; Harris, C. ; Lindstrom, J. L. ; Janzen, E. ; Hemmingsson, C.
出版情報: III-Nitride, SiC, and Diamond Materials for Electronic Devices : symposium held April, 1996, San Francisco, California, U.S.A..  pp.519-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 423
2.

国際会議録
国際会議録
2. Electroluminescence from Implanted and Epitaxially Grown pn-Diodes
Carlsson, F. H. C. ; Storasta, L. ; Hemmingsson, C. ; Bergman, J. P. ; Janzen, E.
出版情報: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.687-690,  2000.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 338-342(1)
3.

国際会議録
国際会議録
3. Fast SiC Epitaxial Growth in a Chimney CVD Reactor and HTCVD Crystal Growth Developments
Ellison, A. ; Zhang, J. ; Magnusson, W. ; Henry, A. ; Wahab, Q. ; Bergman, J. P. ; Hemmingsson, C. ; Son, N. T. ; Janzen, E.
出版情報: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.131-136,  2000.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 338-342(1)
4.

国際会議録
国際会議録
4. HTCVD Growth of Semi-Insulating 4H-SiC Crystals With Low Defect Density
Ellison, A. ; Magnusson, B. ; Hemmingsson, C. ; Magnusson, W. ; Iakimov, T. ; Storasta, L. ; Anne, H. ; Henelius, N. ; Janzen, E.
出版情報: Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 640