Optimization and Realization of Sub 100nm Channel Length Lateral Asymmetric Channel P-MOSFETS
- 著者名:
- 掲載資料名:
- Proceedings of the Tenth International Workshop on the Physics of Semiconductor Devices (December 14-18, 1999)
- シリーズ名:
- Proceedings of SPIE - the International Society for Optical Engineering
- シリーズ巻号:
- 3975
- 発行年:
- 2000
- 巻:
- Part1
- 開始ページ:
- 584
- 終了ページ:
- 587
- 出版情報:
- Bellingham, Wash.: SPIE - The International Society for Optical Engineering
- ISSN:
- 0277786X
- ISBN:
- 9780819436016 [0819436011]
- 言語:
- 英語
- 請求記号:
- P63600/3975
- 資料種別:
- 国際会議録
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1
国際会議録
Performance Trade-offs by the use of High-K Gate Dielectrics in Sub 100 nm Channel Length MOSFETs
SPIE - The International Society for Optical Engineering |
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SPIE-The International Society for Optical Engineering |
SPIE - The International Society for Optical Engineering |
SPIE-The International Society for Optical Engineering, Narosa |
SPIE-The International Society for Optical Engineering |
SPIE-The International Society for Optical Engineering |
SPIE-The International Society for Optical Engineering |
SPIE - The International Society for Optical Engineering |
Materials Research Society |
Electrochemical Society |
SPIE - The International Society for Optical Engineering |