1.

国際会議録
国際会議録
1. Evaluation of Ultra-Thin Gate Evaluation of Ultra-Thin Gate Stack Dielectrics for 0.1 jim PMOSFETs
Srivastava, A. ; Osburn, C.M. ; Yee, K.F. ; Heinisch, H.H. ; Vogel, E.M ; Abmed, K.Z. ; Wang, Z. ; Min, K. ; TimberJoke, B. ; Parker, C. ; Worimnan, J.J. ; Hauser, J.R.
出版情報: Advances in rapid thermal processing : proceedings of the symposium.  pp.81-88,  1999.  Pennington, N. J..  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 99-10
2.

国際会議録
国際会議録
2. Formation of Stacked Gate Oxides by Rapid-Thermal Processing
Misra, V. ; Heinisch, H.H. ; Henson, W.K. ; Hornung, B.E. ; Wortman, J.J.
出版情報: The physics and chemistry of SiO[2] and the Si-SiO[2] interface-3, 1996 : proceedings of the Third International Symposium on the Physics and Chemistry of SiO[2] and the Si-SiO[2] Interface.  pp.282-294,  1996.  Pennington, NJ.  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 96-1
3.

国際会議録
国際会議録
3. The Effects of Densification Ambient on Thin CVD Stacked Dielectrics
Hornung, B.E. ; Heinisch, H.H. ; Wortman, J.J. ; Paulson, W.M. ; Maiti, B. ; Tseng, H.-H.
出版情報: The physics and chemistry of SiO[2] and the Si-SiO[2] interface-3, 1996 : proceedings of the Third International Symposium on the Physics and Chemistry of SiO[2] and the Si-SiO[2] Interface.  pp.295-303,  1996.  Pennington, NJ.  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 96-1