1.

国際会議録
国際会議録
1. *MULTISTEP, IN-SITU SINGLE WAFER PROCESSING - MATERIALS, DEVICE AND EQUIPMENT ISSUES
Hauser, J. R. ; Masnari, N. A. ; Littlejohn, M. A.
出版情報: Rapid thermal annealing/chemical vapor deposition and integrated processing : sympoisium held April 25-28, 1989, San Diego, California, U.S.A..  pp.15-26,  1989.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 146
2.

国際会議録
国際会議録
2. Comparison of Valence-Band Tunneling in Pure SiO2, Composite SiO2/Ta2O5, and Pure Ta2O5, in MOSFETs With 1.0 nm-Thick SiO2-Equivalent Gate Dielectrics
Shanware, A. ; Massoud, H. Z. ; Vogel, E. ; Henson, K. ; Hauser, J. R. ; Wortman, J. J.
出版情報: Ultrathin SiO[2] and high-K materials for USLI gate dielectrics : symposium held April 5-8, 1999, in San Francisco, California, U.S.A..  pp.515-,  1999.  Warrendale, PA.  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 567
3.

国際会議録
国際会議録
3. Defect Reduction in Remote Plasma Deposited Silicon Nitride by Post-Deposition Rapid Thermal Annealing
Lucovsky, G. ; Parker, C. R. ; Wu, Y. ; Hauser, J. R.
出版情報: Rapid thermal and integrated processing VII : symposium held April 13-15, 1998, San Francisco, California, U.S.A..  pp.187-,  1998.  Pittsburgh, PA.  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 525
4.

国際会議録
国際会議録
4. Evaluation of 2.0nm Grown and Deposited Dielectrics in 0.1ｦﾌm PMOSFETs
Srivastava, A. ; Heinisch, H. H. ; Vogel, E. ; Parker, C. ; Osburn, C. M. ; Masnari, N. A. ; Wortman, J. J. ; Hauser, J. R.
出版情報: Rapid thermal and integrated processing VII : symposium held April 13-15, 1998, San Francisco, California, U.S.A..  pp.163-,  1998.  Pittsburgh, PA.  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 525
5.

国際会議録
国際会議録
5. Evaluation and Comparison of 3.0nm Gate-Stack Dielectrics for Tenth-Micron Technology NMOSFETs
Yee, K. F. ; Osburn, C. M. ; Masnari, N. A. ; Hauser, J. R. ; Parker, C. G. ; Lucovsky, G. ; Henson, W. K. ; Wortman, J. J. ; Kippenberg, T. ; Kuerschner, S.
出版情報: Rapid thermal and integrated processing VII : symposium held April 13-15, 1998, San Francisco, California, U.S.A..  pp.157-,  1998.  Pittsburgh, PA.  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 525
6.

国際会議録
国際会議録
6. GATE QUALITY OXIDES PREPARED BY RAPID THERMAL CHEMICAL VAPOR DEPOSITION
Kuehn, R. T. ; Xu, X. ; Holcombe, D. J. ; Misra, V. ; Wortman, J. J. ; Hauser, J. R. ; Wang, Q. -F. ; Maher, D. M.
出版情報: Gas-phase and surface chemistry in electronic materials processing : symposium held November 29-December 2, 1993, Boston, Massachusetts, U.S.A..  pp.531-,  1994.  Pittsburgh, PA.  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 334
7.

国際会議録
国際会議録
7. Incorporation of Nitrogen Atoms at Si/SiO2 Interfaces of Field Effect Transistors (FETs) to Improve Device Reliability
Lucovsky, G. ; Lee, D. R. ; Jing, Z. ; Whitten, J. L. ; Parker, C. ; Hauser, J. R.
出版情報: Surface/interface and stress effects in electronic material nanostructures : symposium held November 27-December 1, 1995, Boston, Massachusetts, U.S.A..  pp.321-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 405
8.

国際会議録
国際会議録
8. Interfacial Properties of Si-Si3N4 Formed by Remote Plasma Enhanced Chemical Vapor Deposition
Misra, V. ; Lazar, H. ; Kulkarni, M. ; Wang, Z. ; Lucovsky, G. ; Hauser, J. R.
出版情報: Ultrathin SiO[2] and high-K materials for USLI gate dielectrics : symposium held April 5-8, 1999, in San Francisco, California, U.S.A..  pp.89-,  1999.  Warrendale, PA.  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 567
9.

国際会議録
国際会議録
9. Modeling the Dependence of the Gate Current on Ge Content in Ultrathin Gate Dielectric PMOS Devices With Poly-Si1-xGex Gate Material
Shanware, A. ; Massoud, H. Z. ; Acker, A. ; Li, V. Z. Q. ; Mirabedini, M. R. ; Henson, K. ; Hauser, J. R. ; Wortman, J. J.
出版情報: Ultrathin SiO[2] and high-K materials for USLI gate dielectrics : symposium held April 5-8, 1999, in San Francisco, California, U.S.A..  pp.127-,  1999.  Warrendale, PA.  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 567
10.

国際会議録
国際会議録
10. Correlation of Roughness and Device Properties for Hydrogen Plasma Cleaning of Si(100) Prior to Gate Oxidation
Montgomery, J. S. ; Barnak, J. P. ; Silvestre, C. ; Hauser, J. R. ; Nemanich, R. J.
出版情報: Ultraclean semiconductor processing technology and surface chemical cleaning and passivation : Symposum held April 17-19, 1995, San Francisco, California, USA.  pp.279-,  1995.  Pittsburgh, PA.  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 386