1.

国際会議録
国際会議録
1. 6H-SiC Crystallinity Behaviour upon B Implantation Studied by Raman Scattering
Paskova,T. ; Valcheva,E. ; Ivanov,I.G. ; Yakimova,R. ; Savage,S. ; Nordell,N. ; Harris,C.I.
出版情報: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.741-744,  1998.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 264-268
2.

国際会議録
国際会議録
2. SiC Surface Engineering for High Voltage JFET Applications
Ivanov,P.A. ; Kon'kov,0.I. ; Konstantinov,A.O. ; Panteleev,V.N. ; Samsonova,T.P. ; Nordell,N. ; Karlsson,S. ; Harris,C.I.
出版情報: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.1081-1084,  1998.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 264-268
3.

国際会議録
国際会議録
3. Hydrogen Passivation of Shallow Impurities in GaAs/AlGaAs Quantum Wells
Harris,C.I. ; Stutzmann,M. ; Kohler,K.
出版情報: Shallow Impurities in Semiconductors : Proceedings of the Fifth International Conference on Shallow Impurities in Semiconductors "Physics and Control of Impurities", International Conference Center Kobe, Japan, 5 to 8 August, 1992.  pp.339-344,  1993.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 117-118
4.

国際会議録
国際会議録
4. Fast Generation-Recombination Channels due to Epitaxial Defects in SiC Metal-Oxide-Semiconductor Devices
Konstantinov,A.O. ; Wahab,Q. ; Hallin,C. ; Harris,C.I. ; Pecz,B.
出版情報: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.1025-1028,  1998.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 264-268
5.

国際会議録
国際会議録
5. Near Band-Gap Emission in V-Inrplanted and Annealed 4H-SiC
Henry,A. ; Egilsson,T. ; Ivanov,I.G. ; Harris,C.I. ; Savage,S. ; Janzen,E.
出版情報: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.497-500,  1998.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 264-268
6.

国際会議録
国際会議録
6. Dispersion in Bound Exciton Binding Energy via Coupling to Interface Localization Potentials in GaAs/AlGaAs Quantum Wells
Harris,C.I. ; Monemar,B. ; Holtz,P.O. ; Sundaram,M. ; Merz,J.L. ; Gossard,A.C.
出版情報: Shallow Impurities in Semiconductors : Proceedings of the Fifth International Conference on Shallow Impurities in Semiconductors "Physics and Control of Impurities", International Conference Center Kobe, Japan, 5 to 8 August, 1992.  pp.285-290,  1993.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 117-118
7.

国際会議録
国際会議録
7. Optical Spectroscopy of Shallow Impurity States in Semiconductor Quantum Wells
Monemar,B. ; Holtz,P.O. ; Harris,C.I. ; Bergman,J.P. ; Kalt,H. ; Sundaram,M. ; Merz,J.L. ; Gossard,A.C. ; Kohler,K. ; Schweizer,T.
出版情報: Shallow Impurities in Semiconductors : Proceedings of the Fifth International Conference on Shallow Impurities in Semiconductors "Physics and Control of Impurities", International Conference Center Kobe, Japan, 5 to 8 August, 1992.  pp.29-36,  1993.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 117-118
8.

国際会議録
国際会議録
8. Thermal Stability of Sputtered TiN as Metal Gate on 4H-SiC
Danielsson,L. ; Harris,C.I. ; Zetteriing,C.-M. ; Osthng,M.
出版情報: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.805-808,  1998.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 264-268
9.

国際会議録
国際会議録
9. Observation of Carbon Clusters at the 4H-SiC/SiO2 Interface
Afanas'ev,V.V. ; Stesmans,A. ; Harris,C.I.
出版情報: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.857-860,  1998.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 264-268
10.

国際会議録
国際会議録
10. Comparison of SiO2 and AIN as Gate Dielectric for SiC MOS Structures
Zetterling,C.-M. ; Ostling,M. ; Harris,C.I. ; Nordell,N. ; Wongchotigul,K. ; Spencer,M.G.
出版情報: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.877-880,  1998.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 264-268