Hot-carrier effects in sub-100-nm gate-length N-MOSFETs with thermal and nitrided oxide thickness down to 1.3 nm

Hot-carrier effects in sub-100-nm gate-length N-MOSFETs with thermal and nitrided oxide thickness down to 1.3 nm

著者名:

Yeap,G.C.-F. ( Advanced Micro Devices,Inc. )
Song,M. ( Advanced Micro Devices,Inc. )
Xiang,Q. ( Advanced Micro Devices,Inc. )
Han,K.M. ( Advanced Micro Devices,Inc. )
Lin,M.-R. ( Advanced Micro Devices,Inc. )

掲載資料名:

Microelectronic device technology II : 23-24 September, 1998, Santa Clara, California

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

3506

発行年:

1998

開始ページ:

265

終了ページ:

270

出版情報:

Bellingham, Washington: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819429650 [0819429651]

言語:

英語

請求記号:

P63600/3506

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00016438
シリーズID:	PA00000029
会議名:	Microelectronic Manufacturing : Microelectronic device technology
回次:	1998 : 2nd
会議開催地:	Santa Clara, CA, USA
会議開催年:	1998.09.23-1998.09.24

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