1.

国際会議録
国際会議録
1. Bias Stress-Induced Threshold-Voltage Instability of SiC MOSFETs
Lelis, A.J. ; Habersat, D.B. ; Lopez, G. ; McGarrity, J.M. ; McLean, F.B. ; Goldsman, N.
出版情報: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1317-1320,  2006.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 527-529
2.

国際会議録
国際会議録
2. Using a First Principles Coulomb Scattering Mobility Model for 4H-SiC MOSFET Device Simulation
Potbhare, S. ; Pennington, G. ; Goldsman, N. ; Lelis, A.J. ; Habersat, D.B. ; McLean, F.B. ; McGarrity, J.M.
出版情報: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1321-1324,  2006.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 527-529
3.

国際会議録
国際会議録
3. On Separating Oxide Charges and Interface Charges in 4H-SiC Metal-Oxide-Semiconductor Devices
Habersat, D.B. ; Lelis, A.J. ; Lopez, G. ; McGarrity, J.M. ; McLean, F.B.
出版情報: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1007-1010,  2006.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 527-529
4.

国際会議録
国際会議録
4. Determination of the Temperature and Field Dependence of the Interface Conductivity Mobility in 4H-SiC/SiO2
Pennington, G. ; Potbhare, S. ; Goldsman, N. ; Habersat, D.B. ; Lelis, A.J.
出版情報: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1055-1058,  2006.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 527-529