1.

国際会議録
国際会議録
1. Controlling the Carbon Vacancy Concentration in 4H-SiC Subjected to High Temperature Treatment
H.M. Ayedh ; R. Nipoti ; A. Hallén ; B.G. Svensson
出版情報: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.414-417,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 858
2.

国際会議録
国際会議録
2. Deep Level Characterization of 5 MeV Proton Irradiated SiC PiN Diodes
G. Alfieri ; A. Mihaila ; H.M. Ayedh ; B.G. Svensson ; P. Hazdra
出版情報: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.308-311,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 858
3.

国際会議録
国際会議録
3. Formation and Annihilation of Carbon Vacancies in 4H-SiC
H.M. Ayedh ; V. Bobal ; R. Nipoti ; A. Hallén ; B.G. Svensson
出版情報: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.331-336,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 858
4.

国際会議録
国際会議録
4. Isothermal Treatment Effects on the Carbon Vacancy in 4H Silicon Carbide
H.M. Ayedh ; R. Nipoti ; A. Hallén ; B.G. Svensson
出版情報: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.351-354,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 821-823
5.

国際会議録
国際会議録
5. Depth-Resolved Carrier Lifetime Measurements in 4H-SiC Epilayers Monitoring Carbon Vacancy Elimination
A. Galeckas ; H.M. Ayedh ; J.P. Bergman ; B.G. Svensson
出版情報: Silicon Carbide and Related Materials 2016.  pp.258-261,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 897
6.

国際会議録
国際会議録
6. DLTS Study on Al+ Ion Implanted and 1950°C Annealed p-i-n 4H-SiC Vertical Diodes
H.M. Ayedh ; M. Puzzanghera ; B.G. Svensson ; R. Nipoti
出版情報: Silicon Carbide and Related Materials 2016.  pp.279-282,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 897
7.

国際会議録
国際会議録
7. Formation of D-Center in p-Type 4H-SiC Epi-Layers during High Temperature Treatments
H.M. Ayedh ; N. Iwamoto ; R. Nipoti ; A. Hallén ; B.G. Svensson
出版情報: Silicon Carbide and Related Materials 2016.  pp.262-268,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 897