1.

国際会議録
国際会議録
1. Dynamical Simulation of SiO2/4H-SiC(0001) Interface Oxidation Process: from First-Principles
T. Ohnuma ; A. Miyashita ; M. Iwasawa ; M. Yoshikawa ; H. Tsuchida
出版情報: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.615-620,  2007.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 556-557
2.

国際会議録
国際会議録
2. Reduction of Traps and Improvement of Carrier Lifetime in SiC Epilayer by Ion Implantation
L. Storasta ; H. Tsuchida
出版情報: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.603-606,  2007.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 556-557
3.

国際会議録
国際会議録
3. Generation of Amorphous SiO2/SiC Interface Structure by the First-Principles Molecular Dynamics Simulation
A. Miyashita ; T. Ohnuma ; M. Iwasawa ; H. Tsuchida ; M. Yoshikawa
出版情報: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.521-524,  2007.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 556-557
4.

国際会議録
国際会議録
4. Development of High Growth Rate SiC Epi-Reactor with Controlled Thermal Gradient
M. Ito ; H. Tsuchida ; I. Kamata ; L. Storasta
出版情報: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.81-84,  2007.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 556-557
5.

国際会議録
国際会議録
5. Advances in Fast Epitaxial Growth of 4H-SiC and Defect Reduction
H. Tsuchida ; I. Kamata ; M. Ito ; T. Miyazawa ; H. Uehigashi
出版情報: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.119-124,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 858
6.

国際会議録
国際会議録
6. Low Resistivity, Thick Heavily Al-Doped 4H-SiC Epilayers Grown by Hot-Wall Chemical Vapor Deposition
S.Y. Ji ; K. Kojima ; Y. Ishida ; H. Tsuchida ; S. Yoshida
出版情報: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.181-184,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 740-742
7.

国際会議録
国際会議録
7. Ion-Induced Anomalous Charge Collection Mechanisms in SiC Schottky Barrier Diodes
T. Makino ; M. Deki ; S. Onoda ; N. Hoshino ; H. Tsuchida
出版情報: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.575-578,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 821-823
8.

国際会議録
国際会議録
8. Three-Dimensional Imaging of Extended Defects in 4H-SiC
R. Tanuma ; M. Nagano ; I. Kamata ; H. Tsuchida
出版情報: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.361-366,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 858
9.

国際会議録
国際会議録
9. Three-Dimensional Imaging of Extended Defects in 4H-SiC by Two-Photon-Excited Band-Edge Photoluminescence
R. Tanuma ; H. Tsuchida
出版情報: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.343-346,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 821-823
10.

国際会議録
国際会議録
10. Epitaxial Layer Thickness Dependence on Heavy Ion Induced Charge Collection in 4H-SiC Schottky Barrier Diodes
T. Makino ; S. Onoda ; N. Hoshino ; H. Tsuchida ; T. Ohshima
出版情報: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.753-756,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 858