Hydrogen-Related Donor Formation: Fabrication Techniques, Characterization, and Application to High-voltage Superjunction Transistors

Hydrogen-Related Donor Formation: Fabrication Techniques, Characterization, and Application to High-voltage Superjunction Transistors

著者名:

掲載資料名:

High purity silicon 9

シリーズ名:

ECS transactions

シリーズ巻号:

3(4)

発行年:

2006

開始ページ:

135

終了ページ:

146

総ページ数:

12

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566775045 [1566775043]

言語:

英語

請求記号:

E23400/3-4

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00047112
シリーズID:	PA00000034
会議名:	International Symposium on High Purity Silicon ; Meeting of the Electrochemical Society
回次:	2006 ; 210th
会議開催地:	Cancun, Mexico
会議開催年:	2006.10.29-2006.11.03

類似資料:

1 国際会議録 Formation and Annihilation of Hydrogen Related Donor States in Proton Implanted and Subsequently Plasma Hydrogenated N-Type Float Zone Silicon R. Job, F. Niedernostheide, H. Schulze Electrochemical Society	7 国際会議録 Hydrogen-plasma-enhanced thermal donor formation in n-type high-resistivity MCZ silicon Simoen, E., Huang, Y. L., Claeys, C., Raft, J. M., Job, R., Fahrner, W. R., Versluys, J., Clauws, P. Electrochemical Society
2 国際会議録 A Low Temperature Technology on the Base of Hydrogen Enhanced Thermal Donor Formation for Future High-Voltage Applications Job, R., Ulyashin, A.G., Fahrner, W.R., Niedernostheide, F.J., Schulze, H.J., Simoen, E., Claeys, C.L., Tonelli, G. SPIE-The International Society for Optical Engineering	8 国際会議録 A Two-Step Low-Temperature Process for p-n Junction Formation Due to Hydrogen-Enhanced Thermal Donor Formation in p-Type Czochralski Silicon Job, R., Fahrner, W. R., Kazuchits, N. M., Ulyashin, A. G. MRS - Materials Research Society
3 国際会議録 Carrier Lifetime Control and Characterization of High-Resistivity Silicon Schuize, H.-J., Frohnmeyer, A., Niedernostheide, F.-J., Hille, F., Ttitto, P., Pavelka, T., Wachutka, U. Electrochemical Society	9 国際会議録 Structure Sensitive Hydrogenation Effects in Polysilicon High Voltage Thin-Film Transistors Clough, F. J., Cross, R., SankaraNarayanan, E. M., Xu, Y. Z. Materials Research Society
4 国際会議録 Distribution of Hydrogen- and Vacancy-Related Donor and Acceptor States in Helium-Implanted and Plasma-Hydrogenated Float-Zone Silicon Reinhart Job, Franz-Josef Niedernostheide, Hans-Joachim Schulze, Holger Schulze Materials Research Society	10 国際会議録 Formation of Doping Profiles in Float Zone Silicon by Helium Implantation and Plasma Hydrogenation Reinhart Job, Franz-Josef Niedernostheide, Hans-Joachim Schulze, Holger Schulze Materials Research Society
5 国際会議録 Doping Of Oxidized Float Zone Silicon By Thermal Donors - A Low Thermal Budget Doping Method For Device Applications? Job, R., Ulyashin, A.G., Huang, Y.L., Fahrner, W.R., Simoen, E., Claeys, C., Niedernostheide, F.-J., Schulze, H.-J., … Materials Research Society	11 国際会議録 Formation of Hydrogen Related Defects and Nano-Voids in Plasma Hydrogenated ZnO Reinhart Job Materials Research Society
6 国際会議録 Low temperature Doping of Silicon by Hydrogen Plasma Treatments* Job, R., Ulyashin, A.G., Ma, Y., Fahnwr, W.R., Simoen, E., Rafi, J.M., Claeys, C., Niedernostheide, F.J., Schulze, H.J. Electrochemical Society	12 国際会議録 Analysis of Oxygen Thermal Donor Formation in n-type Cz-Silicon Rafi, J.M., Simoen, E., Claeys, C., Ulyashin, A., Job, R., Fahrner, W., Versluys, J., Clauws, P., Lozano, M., … SPIE-The International Society for Optical Engineering

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