1.

国際会議録
国際会議録
1. Effects of Surface Morphological Defects and Crystallographic Defects on Reliability of Thermal Oxides on C-Face
T. Suzuki ; H. Yamaguchi ; T. Hatakeyama ; H. Matsuhata ; J. Senzaki
出版情報: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.789-792,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 717-720
2.

国際会議録
国際会議録
2. Correlation between Surface Morphological Defects and Crystallographic Defects in SiC
T. Hatakeyama ; K. Ichinoseki ; H. Yamaguchi ; N. Sugiyama ; H. Matsuhata
出版情報: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.359-362,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 717-720
3.

国際会議録
国際会議録
3. Threading Dislocations in 4H-SiC Observed by Double-Crystal X-Ray Topography
H. Yamaguchi ; H. Matsuhata
出版情報: Defects-recognition, imaging and physics in semiconductors XIV : selected, peer reviewed papers from the 14th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, September 25-29, 2011, Miyazaki, Japan.  pp.7-10,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 725
4.

国際会議録
国際会議録
4. TEM Observation of SiO2/4H-SiC Hetero Interface
H. Matsuhata ; J. Senzaki ; I. Nagai ; H. Yamaguchi
出版情報: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.671-674,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 600-603
5.

国際会議録
国際会議録
5. Impact of the Wafer Quality on the Reliability of MOS Structure on the C-Face of 4H-SiC
T. Hatakeyama ; T. Suzuki ; J. Senzaki ; K. Fukuda ; H. Matsuhata
出版情報: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.783-786,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 600-603
6.

国際会議録
国際会議録
6. EBIC Analysis of Breakdown Failure Point in 4H-SiC PiN Diodes
T. Ohyanagi ; C. Bin ; T. Sekiguchi ; H. Yamaguchi ; H. Matsuhata
出版情報: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.707-710,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 615-617
7.

国際会議録
国際会議録
7. Contrast of Basal Plane and Threading Edge Dislocations in 4H-SiC by X-Ray Topography in Grazing Incidence Geometry
H. Matsuhata ; H. Yamaguchi ; I. Nagai ; T. Ohno ; R. Kosugi
出版情報: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.321-324,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 600-603
8.

国際会議録
国際会議録
8. Dislocation Contrast of 4H-SiC in X-Ray Topography under Weak-Beam Condition
H. Yamaguchi ; H. Matsuhata ; I. Nagai
出版情報: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.313-316,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 600-603
9.

国際会議録
国際会議録
9. Observation of Misfit Dislocations Introduced by Epi-Layer Growth on 4H-SiC
H. Matsuhata ; H. Yamaguchi ; I. Nagai ; T. Ohno ; R. Kosugi
出版情報: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.309-312,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 600-603
10.

国際会議録
国際会議録
10. Microscopic Examination of SiO2/4H-SiC Interfaces
T. Hatakeyama ; H. Matsuhata ; T. Suzuki ; T. Shinohe ; H. Okumura
出版情報: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.330-333,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 679-680