1.

国際会議録
国際会議録
1. COMPARATIVE IMAGING OF LIQUIDS IN ROCKS BY NMR AND DIFFERENTIAL X-RAY CT
Jeandey, C. ; Casagrande, J.M. ; Briguet, A. ; Ntoutoume, T. ; Guillot, G.
出版情報: Advanced tomographic imaging methods for the analysis of materials : symposium held November 28-30, 1990, Boston, Massachusetts, U.S.A..  pp.175-182,  1991.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 217
2.

国際会議録
国際会議録
2. ON THE ORIGIN OF THE NEW ELECTRON TRAPS INDUCED BY RAPID THERMAL ANNEALING IN GaAs USING CAPPING PROXIMITY TECHNIQUE
Marrakchi, G. ; Chaussemy, G. ; Laugier, A. ; Guillot, G.
出版情報: Advances in materials, processing, and devices in III-V compound semiconductors.  pp.27-32,  1989.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 144
3.

国際会議録
国際会議録
3. ABSOLUTE PHOTOIONIZATION CROSS SECTIONS OF THE ACCEPTOR STATE LEVEL OF CHROMIUM IN INDIUM PHOSPHIDE
Bremond, G. ; Guillot, G. ; Nouailhat, A. ; Picoli, G.
出版情報: Microscopic identification of electronic defects in semiconductors : symposium held April 15-18, 1985, San Francisco, California, U.S.A..  pp.371-376,  1985.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 46
4.

国際会議録
国際会議録
4. A COMPARATIVE STUDY OF DIFFERENT RAPID ANNEALING TECHNIQUES ON ELECTRICALLY ACTIVE DEFECTS IN UNIMPLANTED GALLIUM ARSENIDE
Marrakchi, G. ; Guillot, G. ; Nouailhat, A.
出版情報: Defects in electronic materials : symposium held November 30-December 3, 1987, Boston, Massachusetts, U.S.A..  pp.509-514,  1988.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 104
5.

国際会議録
国際会議録
5. PROPERTIES OF THE EL2 LEVEL IN ORGANOMETALLIC Ga1-XAlXAs
Ben Cherifa, A. ; Azoulay, R. ; Guillot, G.
出版情報: Defects in electronic materials : symposium held November 30-December 3, 1987, Boston, Massachusetts, U.S.A..  pp.401-404,  1988.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 104
6.

国際会議録
国際会議録
6. RELAXATION DEFECT CHARACTERIZATION OF RTCVD Si1-XGeX/Si HETEROSTRUCTURES BY ELECTRICAL AND OPTICAL TECHNIQUES
Souifi, A. ; Bremond, G. ; Benyattou, T. ; Guillot, G. ; Dutartre, D.
出版情報: Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A..  pp.247-252,  1992.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 262
7.

国際会議録
国際会議録
7. Formation, Morphology and Optical Properties of SiC Nanopowder
Nychyporuk, T. ; Marty, O. ; Bluet, J.M. ; Lysenko, V. ; Perrin, R. ; Guillot, G. ; Barbier, D.
出版情報: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.763-766,  2006.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 527-529
8.

国際会議録
国際会議録
8. DEEP DONOR AND ACCEPTOR LEVELS INDUCED BY HIGH TEMPERATURE AND LONG TIME ANNEALING IN LEC GALLIUM ARSENIDE
Marrakchi, G. ; Kalboussi, A. ; Guillot, G. ; Ben Salem, M. ; Maaref, H. ; Molva, E.
出版情報: Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A..  pp.859-864,  1992.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 240
9.

国際会議録
国際会議録
9. Time Domain and Frequency Analysis of Random Telegraph Signal and the Contributions of G-R Centres to I-V Instabilities in 4H-SiC MESFETs
Trabelsi, M. ; Sghaier, N. ; Bluet, J.M. ; Yacoubi, N. ; Guillot, G. ; Brylinski, C.
出版情報: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1251-1254,  2006.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 527-529
10.

国際会議録
国際会議録
10. THE DONOR STATE OF VANADIUM IN INDIUM PHOSPHIDE
Bremond, G. ; Nouailhat, A. ; Guillot, G. ; Deveaud, B. ; Lambert, B. ; Toudic, Y. ; Clerjaud, B. ; Naud, C.
出版情報: Microscopic identification of electronic defects in semiconductors : symposium held April 15-18, 1985, San Francisco, California, U.S.A..  pp.359-364,  1985.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 46