1.

国際会議録
国際会議録
1. High Channel Mobility 4H-SiC MOSFETs
Sveinbjornsson, E.O. ; Gudjonsson, G. ; Allerstam, F. ; Olafsson, H.O. ; Nilsson, P.A. ; Zirath, H. ; Rodle, T. ; Jos, R.
出版情報: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.961-966,  2006.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 527-529
2.

国際会議録
国際会議録
2. Field Effect Mobility in n-Channel Si Face 4H-SiC MOSFET with Gate Oxide Grown on Aluminum Ion-Implanted Material
Gudjonsson, G. ; Olafsson, H. O. ; Allerstam, F. ; Nilsson, P. A. ; Sveinbjornsson, E. O. ; Rodle, T. ; Jos, R.
出版情報: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.833-836,  2005.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 483-485
3.

国際会議録
国際会議録
3. High Field Effect Mobility in Si Face 4H-SiC MOSFET Made on Sublimation Grown Epitaxial Material
Sveinbjornsson, E. O. ; Olafsson, H. O. ; Gudjonsson, G. ; Allerstam, F. ; Nilsson, P. A. ; Syvajarvi, M. ; Yakimova, R. ; Hallin, C. ; Rodle, T. ; Jos, R.
出版情報: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.841-844,  2005.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 483-485
4.

国際会議録
国際会議録
4. High Power-Density 4H-SiC RF MOSFETs
Gudjonsson, G. ; Allerstam, F. ; Olafsson, H.O. ; Nilsson, P.A. ; Hjelmgren, H. ; Andersson, K. ; Sveinbjornsson, E.O. ; Zirath, H. ; Rodle, T. ; Jos, R.
出版情報: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1277-1280,  2006.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 527-529
5.

国際会議録
国際会議録
5. High Field Effect Mobility in 6H-SiC MOSFET with Gate Oxides Grown in Alumina Environment
Allerstam, F. ; Gudjonsson, G. ; Olafsson, H. O. ; Sveinbjornsson, E. O. ; Rodle, T. ; Jos, R.
出版情報: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.837-840,  2005.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 483-485
6.

国際会議録
国際会議録
6. Enhancement of Inversion Channel Mobility in 4H-SiC MOSFETs using a Gate Oxide Grown in Nitrous Oxide (N2O)
Gudjonsson, G. ; Olafsson, H.O. ; Sveinbjoernsson, E.O.
出版情報: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1425-1428,  2004.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 457-460