1.

国際会議録
国際会議録
1. Depth profile characterization of hydrogen implanted silicon using spectroscopic ellipsometry
Gubiotti, T. ; Jacy, D. ; Hoobler, R.J.
出版情報: Process and Materials Characterization and Diagnostics in IC Manufacturing.  pp.105-114,  2003.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
シリーズ名: Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号: 5041
2.

国際会議録
国際会議録
2. Normal-incidence spectroscopic ellipsometry and polarized reflectometry for measurement and control of photoresist critical dimension
Holden, J.M. ; Gubiotti, T. ; McGaham, W.A. ; Dusa, M.V. ; Kiers, T.
出版情報: Metrology, Inspection, and Process Control for Microlithography XVI.  Part Two  pp.1110-1121,  2002.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
シリーズ名: Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号: 4689