1.

国際会議録
国際会議録
1. Si-and Mg-Doped GaN Layers Grown by Gas Source Molecular-Beam Epitaxy Using Ammonia
Grandjean, N. ; Massies, M. ; Leroux, M.
出版情報: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.211-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 482
2.

国際会議録
国際会議録
2. Effect of the Nitridation of the Sapphire (0001) substrate on the GaN Growth
Grandjean, N. ; Massies, J. ; Vennegues, P. ; Laugt, M. ; Leroux, M.
出版情報: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.67-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 449
3.

国際会議録
国際会議録
3. Effect of V/III Ratio on the Properties of GaN Layers Grown by Molecular-Beam Epitaxy Using NH3
Grandjean, N. ; Leroux, M. ; Massies, J. ; Mesrine, M. ; Lorenzini, P.
出版情報: Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A..  pp.69-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 512
4.

国際会議録
国際会議録
4. Phonons and Holes in Magnesium-Doped GaN
Demangeot, F. ; Frandon, J. ; Renucci, M. A. ; Smirnov, D. ; Leotin, J. ; Grandjean, N. ; Beaumont, B. ; Kuball, M. ; Davies, T. ; Steeds, J. W.
出版情報: Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A..  pp.333-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 512
5.

国際会議録
国際会議録
5. Optical and Structural Properties of AlGaN/GaN Quantum Wells Grown by Molecular Beam Epitaxy
Grandjean, N. ; Massies, J. ; Leroux, M. ; Laugt, M. ; Lefebvre, P. ; Gil, B. ; Allegre, J. ; Bigenwald, P.
出版情報: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G11.7.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 537
6.

国際会議録
国際会議録
6. Molecular Beam Epitaxy of High Quality InGaN Alloys Using Ammonia: Optical and Structural Properties
Grandjean, N. ; Massies, J. ; Leroux, M. ; Laugt, M. ; Vennegues, P. ; Dalmasso, S. ; Ruterana, P. ; Hirsch, L. ; Barriere, S.
出版情報: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G3.59.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 537
7.

国際会議録
国際会議録
7. Quantum-Confined Stark Effect and Recombination Dynamics of Spatially Indirect Excitons in MBE-Grown GaN-AlGaN Quantum Wells
Lefebvre, P. ; Gil, B. ; Allegre, J. ; Mathieu, H. ; Grandjean, N. ; Leroux, M. ; Massies, J. ; Bigenwald, P.
出版情報: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G3.69.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 537
8.

国際会議録
国際会議録
8. Thermal Stability of GaN Investigated by Raman Scattering
Kuball, M. ; Demangeot, F. ; Frandon, J. ; Renucci, M. A. ; Grandjean, N. ; Briot, O.
出版情報: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G6.28.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 537
9.

国際会議録
国際会議録
9. Occurrence of 'Accidental' InN Quantum Dots in Indium Gallium Nitride/Gallium Nitride Heterostructures
O'Donnell, K.P. ; Martin, R.W. ; White, M.E. ; Pereira, S. ; Mosselmans, J.F.W. ; Tobin, M.J. ; Grandjean, N. ; Damilano, B.
出版情報: Quantum confined semiconductor nanostructures : symposium held December 2-5, 2002, Boston, Massachusetts, U.S.A..  pp.13-36,  2003.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 737
10.

国際会議録
国際会議録
10. Characterization of Near-Edge-Optical Transitions in Undoped and Doped GaN/Sapphire Grown by MOVPE, HVPE, and GSMBE
Leroux, M. ; Beaumont, B. ; Grandjean, N. ; Massies, J. ; Gibart, P.
出版情報: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.695-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 449