1.

国際会議録
国際会議録
1. Electrical Characterization of 1 KeV He-, Ne-, and Ar-Ion Bombarded n-Si Using Deep Level Transient Spectroscopy
Deenapanray, P. N. K. ; Auret, F. D. ; Ridgway, M. C. ; Goodman, S. A. ; Myburg, G.
出版情報: Defect and impurity engineered semiconductors, II : symposium held April 13-17, 1998, San Francisco, California, U.S.A..  pp.519-,  1998.  Warrendale, Pa.  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 510
2.

国際会議録
国際会議録
2. Electrical Characterization of Defects Introduced in n-GaN During High Energy Proton and He-Ion Irradiation
Goodman, S. A. ; Auret, F. D. ; Koschnick, F. K. ; Spaeth, J-M. ; Beaumont, B. ; Gibart, P.
出版情報: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G6.12.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 537
3.

国際会議録
国際会議録
3. Electrical Characterization of Sputter Deposition Induced Defects in n-GaN
Auret, F. D. ; Goodman, S. A. ; Koschnick, F. K. ; Spaeth, J-M. ; Beaumont, B. ; Gibart, P.
出版情報: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G6.13.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 537
4.

国際会議録
国際会議録
4. Schottky-Barrier Modification of Low-Energy Ar-Ion Bombarded GaAs and Si
Deenapanray, P. N. K. ; Auret, F. D. ; Goodman, S. A.
出版情報: Defect and impurity engineered semiconductors, II : symposium held April 13-17, 1998, San Francisco, California, U.S.A..  pp.443-,  1998.  Warrendale, Pa.  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 510
5.

国際会議録
国際会議録
5. Optical and Electrical Characterization Study of SiCl4 Reactive-Io-Etched GaAs
Murtagh, M. ; Ye, Shu-Ren ; Masterson, H. J. ; Beechinor, J. T. ; Crean, G. M. ; Auret, F. D. ; Deenapanray, P. N. K. ; Mayer, W. E. ; Goodman, S. A. ; Myburg, G.
出版情報: Defects in electronic materials II : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.75-,  1997.  Pittsburgh, Penn.  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 442
6.

国際会議録
国際会議録
6. Characterization of a Metastable Defect Introduced in Epitaxially Grown Boron-Doped Si by 5.4 MeV α-Particles
Mamor, M. ; Auret, F. D. ; Goodman, S. A. ; Meyer, W. E.
出版情報: Defect and impurity engineered semiconductors, II : symposium held April 13-17, 1998, San Francisco, California, U.S.A..  pp.449-,  1998.  Warrendale, Pa.  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 510