1.

国際会議録
国際会議録
1. Effects of localization in CdTe-based quantum well structures
Godlewski,M. ; Ivanov,V.Yu ; Khachapuridze,A. ; Narkowicz,R. ; Phillips,M.R.
出版情報: Optical organic and inorganic materials, 16-19 August, 2000, Vilnius, Lithuania.  pp.86-91,  2000.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
シリーズ名: Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号: 4415
2.

国際会議録
国際会議録
2. Optically Detected Cyclotron Resonance for Defect Characterization
Godlewski,M. ; Chen,W.M. ; Monemar,B.
出版情報: Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993.  Pt.3  pp.1353-1358,  1994.  Zurich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 143-147
3.

国際会議録
国際会議録
3. On the origin of yellow donor-acceptor pair emission iu GaN
Godlewski,M. ; Ivanov,V.Yu. ; Kaminska,A. ; Zuo,H.Y. ; Goldys,E.M. ; Tansley,T.L. ; Barski,A. ; Rossner,U. ; Rouvicre,J.L. ; Arlery,M. ; Grzegory,I. ; Suski,T. ; Porowski,S. ; Bergman,J.P.
出版情報: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part2  pp.1149-1154,  1997.  Zurich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 258-263
4.

国際会議録
国際会議録
4. Optical and Structural Studies of GaN Epilayers
Godlewski,M.
出版情報: Proceedings of the Tenth International Workshop on the Physics of Semiconductor Devices (December 14-18, 1999).  Part1  pp.165-170,  2000.  Bellingham, Wash..  SPIE - The International Society for Optical Engineering
シリーズ名: Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号: 3975
5.

国際会議録
国際会議録
5. Role of localization effects in GaN and InGaN
Godlewski,M. ; Goldys,E.M.
出版情報: Smart optical inorganic structures and devices : 16-19 August 2000, Vilnius, Lithuania.  pp.99-108,  2000.  Bellingham, Washington.  SPIE-The International Society for Optical Engineering
シリーズ名: Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号: 4318
6.

国際会議録
国際会議録
6. Optical Properties of Cubic Phase GaN Epilayers Grown by Molecular Beam Epitaxy on SiC/Silicon(100)Substrates
Godlewski,M. ; Ivanov,V.Yu. ; Bergman,J.P. ; Monemar,B. ; Barski,A. ; Langer,R.
出版情報: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.1343-1346,  1998.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 264-268
7.

国際会議録
国際会議録
7. Recombination Dynamics of Unthermalised Excitons in Quantum Well Structures of II-VI Semiconductors
Godlewski,M.
出版情報: Ultrafast phenomena in semiconductors : proceedings of the 10th International Symposium on Ultrafast Phenomena in Semiconductors (10-UFPS), held in Vilnius, Lithuania, August/September, 1998.  pp.197-204,  1999.  Zurich-Uetikon, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 297-298
8.

国際会議録
国際会議録
8. Dynamics of Microwave Induced Changes of Photoluminescence of 2D Carriers in Modulation Doped Structures of GaAs/AlGaAs
Godlewski,M. ; Khachepuridze,A. ; Ivanov,V.Yu.
出版情報: Ultrafast phenomena in semiconductors : proceedings of the 10th International Symposium on Ultrafast Phenomena in Semiconductors (10-UFPS), held in Vilnius, Lithuania, August/September, 1998.  pp.229-232,  1999.  Zurich-Uetikon, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 297-298
9.

国際会議録
国際会議録
9. Optically Detected Magnetic Resonance Studies of Bound Exciton Triplets for Complex Defects in GaP
Monemar,B. ; Chen,W.M. ; Godlewski,M.
出版情報: Proceedings of the 15th International Conference on Defects in Semiconductors : Budapest, Hungary, August 22-26, 1988.  Part2  pp.769-774,  1989.  Aederlmannsdorf, Switzwelns.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 38-41
10.

国際会議録
国際会議録
10. Deep Donor-Acceptor Pair Recombination in Bulk GaP Studied by ODMR and DLTS Techniques
Awadelkarim,O.O. ; Godlewski,M. ; Monemar,B.
出版情報: Proceedings of the 15th International Conference on Defects in Semiconductors : Budapest, Hungary, August 22-26, 1988.  Part2  pp.821-826,  1989.  Aederlmannsdorf, Switzwelns.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 38-41