Novel Oxides and Reliability for the Passivation of AlGaN/GaN High Electron Mobility Transistor
- 著者名:
Gila, B. Onstine, A.H. Hlad, M Gerger, A. Herrero, A. Allums, K.K. Stodilka, D. Jang, S. Kang, S. Anderson, T. Abernathy, C.R. Ren, F. Pearton, S.J. - 掲載資料名:
- State-of-the-art program on compound semiconductors (SOTAPOCS XLII) and processes at the compound-semiconductor/solution interface : proceedings of the international symposia
- シリーズ名:
- Electrochemical Society Proceedings Series
- シリーズ巻号:
- 2005-04
- 発行年:
- 2005
- 開始ページ:
- 247
- 終了ページ:
- 261
- 総ページ数:
- 15
- 出版情報:
- Pennington, N.J.: Electrochemical Society
- ISSN:
- 01616374
- ISBN:
- 9781566774628 [1566774624]
- 言語:
- 英語
- 請求記号:
- E23400/200504
- 資料種別:
- 国際会議録
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12
国際会議録
The Effect of External Strain on the Conductivity of AIGaN/GaN High Electron Mobility Transistors
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