1.

国際会議録
国際会議録
1. Understanding And Modeling Ramp Rate Effects On Shallow Junction Formations
Chakravarthi, Srinivasan ; Gencer, Alp H. ; Dunham, Scott T. ; Downey, Daniel F.
出版情報: Si front-end processing - physics and technology of dopant-defect interactions II : symposium held April 24-27, 2000, San Francisco, California, U.S.A..  pp.B4.8-,  2001.  Warrendale, PA.  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 610
2.

国際会議録
国際会議録
2. Modeling of Dislocation Loop Growth and Transient-Enhanced Diffusion in Silicon for Amorphizing Implants
Gencer, Alp H. ; Dunham, Scott T.
出版情報: Microstructure evolution during irradiation : symposium held December 2-5, 1996, Boston, Massachusetts, U.S.A..  pp.35-,  1997.  Pittsburgh, Pa..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 439
3.

国際会議録
国際会議録
3. Modeling of Dislocation Loop Growth and Transient Enhanced Diffusion in Silicon for Amorphizing Implants
Gencer, Alp H. ; Dunham, Scott T.
出版情報: Materials modification and synthesis by ion beam processing : symposium held December 2-5, 1996, Boston, Massachusetts, U.S.A..  pp.27-,  1997.  Pittsburgh, Pa..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 438
4.

国際会議録
国際会議録
4. Moment-Based Modelling of Extended Defects for Simulation of TED: What Level of Complexity is Necessary?
Gencer, Alp H. ; Dunham, Scott T.
出版情報: Silicon front-end technology--materials processing and modelling, symposium held April 13-15, 1998, San Francisco, California, U.S.A..  pp.105-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 532