Modeling of Transient Enhanced Diffusion Based on Evolution of {311} Defects

Modeling of Transient Enhanced Diffusion Based on Evolution of {311} Defects

著者名:

掲載資料名:

Proceedings of the Fourth International Symposium on Process Physics and Modeling in Semiconductor Technology

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

96-4

発行年:

1996

開始ページ:

155

終了ページ:

163

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566771542 [1566771544]

言語:

英語

請求記号:

E23400/961823

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013837
シリーズID:	PA00000028
会議名:	International Symposium on Process Physics and Modeling in Semiconductor Technology ; Spring Meeting of the Electrochemical Society
回次:	4th ; 1996
会議開催地:	Los Angeles, California, USA
会議開催年:	1996.05.05-1996.05.10

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1 国際会議録 Fundamental Modeling of Transient-Enhanced Diffusion Through Extended Defect Evolution Gencer, A. H., Chakravarthi, S., Clejan, I., Dunham, S. T. MRS - Materials Research Society	7 国際会議録 Models and Parameters for the Coupled Diffusion of Dopants and Point Defects in Silicon Dunham, S.T., Wittel, F. Electrochemical Society
2 国際会議録 Modeling of Dislocation Loop Growth and Transient-Enhanced Diffusion in Silicon for Amorphizing Implants Gencer, Alp H., Dunham, Scott T. MRS - Materials Research Society	8 国際会議録 Modeling Interactions of Point Defects with Precipitates Using the Reduced Precipitation Model Clejan, I., Dunham, S.T. Electrochemical Society
3 国際会議録 Modeling of Dislocation Loop Growth and Transient Enhanced Diffusion in Silicon for Amorphizing Implants Gencer, Alp H., Dunham, Scott T. MRS - Materials Research Society	9 国際会議録 ENERGETICS AND KINETICS OF EXTENDED (311) DEFFECTS IN Si Fastenko, P., Dunham, S.T. Electrochemical Society
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5 国際会議録 THE PIECES OF THE PUZZLE CHALLENGE IN MODELING OF TRANSIENT ENHANCED DIFFUCTION Geneer, A.H., Dunharn, S.T. Electrochemical Society	11 国際会議録 Two Stream Model for Dopant Diffusion in Polysilicon Incorporating Effects of Grain Growth Banerice, S., Dunham, S.T. Electrochemical Society
6 国際会議録 MODELING OF PHOSPHORUS DIFFUSION IN SILICON Dunham, S.T. Electrochemical Society	12 国際会議録 MODELS FOR THE PHYSICAL EXETEN OF POINT DEFECT INTER ACTIONS IN SILICON Agarwal, A.M., Dunham, S.T. Electrochemical Society

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