1.

国際会議録
国際会議録
1. Observation of Free Carrier Redistribution Resulting from Stacking Fault Formation in Annealed 4H-SiC
Glembocki, O.J. ; Skowronski, M. ; Prokes, S.M. ; Gaskill, D.K. ; Caldwell, J.D.
出版情報: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.347-350,  2006.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 527-529
2.

国際会議録
国際会議録
2. OMVPE GROWTH OF EPITAXIAL InSb THIN FILMS USING A NOVEL GROUP V SOURCE COMPOUND
Stauf, Gregory, T. ; Gaskill, D.K. ; Bottka, N. ; Gedridge, R.Jr., W.
出版情報: Long-wavelength semiconductor devices, materials, and processes : symposium held November 26-29, 1990, Boston, Massachusetts, U.S.A..  pp.239-244,  1991.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 216
3.

国際会議録
国際会議録
3. Photoreflectance Probing of Below Gap States in GaN/AlGaN High Electron Mobility Transitor Structures
Gaskill, D.K. ; Glembocki, O.J. ; Peres, B. ; Henry, R. ; Koleske, D. ; Wickenden, A.
出版情報: GaN and related alloys - 2002 : symposium held December 2-6, Boston, Massachusetts, U.S.A..  pp.249-254,  2002.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 743
4.

国際会議録
国際会議録
4. Photoreflectance Characterization and Control of Defects in GaN by Etching With an Inductively Coupled Plasma
Glembocki, O.J. ; Gaskill, D.K. ; Prokes, S.M. ; Pearton, S.W.
出版情報: GaN and related alloys - 2002 : symposium held December 2-6, Boston, Massachusetts, U.S.A..  pp.273-278,  2002.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 743