1.

国際会議録
国際会議録
1. Observation of Configurational Switching of Deep Defects in a-Si:H Using Thermal Step Insertion During Capacitance Transient Measurements
Gardner, Adam D. ; Cohen, J. David
出版情報: Amorphous silicon technology, 1996 : symposium held April 8-12, 1996, San Francisco, California, U.S.A..  pp.709-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 420
2.

国際会議録
国際会議録
2. New Evidence for Deep Defect Relaxation in Hydrogenated Amorphous Silicon from Junction Capacitance Methods
Cohen, J. David ; Gardner, Adam D. ; Kwon, Daewon
出版情報: Amorphous silicon technology, 1996 : symposium held April 8-12, 1996, San Francisco, California, U.S.A..  pp.679-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 420