1.

国際会議録
国際会議録
1. The Effect of Delay Between Dry Etch and Wet Clean Processing Steps on Cleaning of Post-Etch Residues
D. Hellin ; I.J. Vos ; G. Vereecke ; E. Pavel ; W. Boullart
出版情報: Cleaning and surface conditioning technology in semiconductor device manufacturing 10.  pp.283-290,  2007.  Pennington, N.J..  Electrochemical Society
シリーズ名: ECS transactions
シリーズ巻号: 11(2)
2.

国際会議録
国際会議録
2. Modifications of Porous Low-k by Plasma Treatments and Wet Cleans
K. Xu ; G. Vereecke ; E. Kesters ; Q. Le ; M. Lux
出版情報: Cleaning and surface conditioning technology in semiconductor device manufacturing 10.  pp.409-416,  2007.  Pennington, N.J..  Electrochemical Society
シリーズ名: ECS transactions
シリーズ巻号: 11(2)
3.

国際会議録
国際会議録
3. Effect of Chemical Solutions and Surface Wettability on the Stability of Advanced Porous Low-k Materials
Q. T. Le ; G. Vereecke ; A. Bertha ; E. Kesters ; M. Lux ; H. Struyf
出版情報: Materials, processes, and reliability for advanced interconnects for micro- and nanoelectronics--2011 : symposium held April 25-29, 2011, San Francisco, California, U.S.A..  pp.41-46,  2012.  Warrendale, PA.  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 1335
4.

国際会議録
国際会議録
4. Ultra Low-k Materials Based on Self-Assembled Organic Polymers
M. Pantouvaki ; L. Zhao ; C. Huffman ; K. Vanstreels ; I. Ciofi ; G. Vereecke ; T. Conard ; Y. Ono ; M. Nakajima ; K. Nakatani ; G. P. Beyer ; M. R. Baklanov
出版情報: Materials, processes, and reliability for advanced interconnects for micro- and nanoelectronics--2011 : symposium held April 25-29, 2011, San Francisco, California, U.S.A..  pp.3-14,  2012.  Warrendale, PA.  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 1335