1.

国際会議録
国際会議録
1. Structure and Diffusion of Phosphorus in Monohydride Si(001)-2x 1-H
K. Kweon ; S. Harrison ; G. S. Hwang
出版情報: Advanced gate stack, source/drain and channel engineering for Si-based CMOS 3 : new materials, processes and equipment.  pp.345-350,  2007.  Pennington, NJ.  Electrochemical Society
シリーズ名: ECS transactions
シリーズ巻号: 6(1)
2.

国際会議録
国際会議録
2. Structure and Stability of Small Self-interstitial Clusters in Si: Prediction by First Principles-based Monte Carlo Simulations
S. Lee ; G. S. Hwang
出版情報: Advanced gate stack, source/drain and channel engineering for Si-based CMOS 3 : new materials, processes and equipment.  pp.339-344,  2007.  Pennington, NJ.  Electrochemical Society
シリーズ名: ECS transactions
シリーズ巻号: 6(1)