1.

国際会議録
国際会議録
1. Formation of Doping Profiles in Float Zone Silicon by Helium Implantation and Plasma Hydrogenation
Reinhart Job ; Franz-Josef Niedernostheide ; Hans-Joachim Schulze ; Holger Schulze
出版情報: Performance and reliability of semiconductor devices : symposium held November 30-December 3, 2008, Boston, Massachusetts, U.S.A..  pp.237-242,  2009.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 1108
2.

国際会議録
国際会議録
2. Distribution of Hydrogen- and Vacancy-Related Donor and Acceptor States in Helium-Implanted and Plasma-Hydrogenated Float-Zone Silicon
Reinhart Job ; Franz-Josef Niedernostheide ; Hans-Joachim Schulze ; Holger Schulze
出版情報: Reliability and materials issues of semiconductor optical and electrical devices and materials : symposium held November 29 - December 3, Boston, Massachusetts, U.S.A..  pp.291-298,  2010.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 1195