1.

国際会議録
国際会議録
1. The Effect Of Impurities On Diffusion And Activation Of Ion Implanted Boron In Silicon
Robertson, L.S. ; Brindos, R. ; Jones, K. S. ; Law, Mark E. ; Downey, D. F. ; Falk, S. ; Liu, J.
出版情報: Si front-end processing - physics and technology of dopant-defect interactions II : symposium held April 24-27, 2000, San Francisco, California, U.S.A..  pp.B5.8-,  2001.  Warrendale, PA.  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 610
2.

国際会議録
国際会議録
2. Boron Activation During Solid Phase Epitaxial Regrowth
Banisaukas, Heather Brye ; Jones, K.S. ; Talwar, Somit ; Falk, S. ; Downey, D.F.
出版情報: Si front-end processing - physics and technology of dopant-defect interactions II : symposium held April 24-27, 2000, San Francisco, California, U.S.A..  pp.B10.2-,  2001.  Warrendale, PA.  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 610
3.

国際会議録
国際会議録
3. Junction Depth Reduction Of Ion Implanted Boron In Silicon Through Fluorine Ion Implantation
Robertson, L. S. ; Warnes, P. N. ; Jones, K. S. ; Earles, S. K. ; Law, M. E. ; Downey, D. F. ; Falk, S. ; Liu, J.
出版情報: Si front-end processing - physics and technology of dopant-defect interactions II : symposium held April 24-27, 2000, San Francisco, California, U.S.A..  pp.B4.2-,  2001.  Warrendale, PA.  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 610