1.

国際会議録
国際会議録
1. THE BEHAVIOUR OF OXYGEN IN OXYGENATED N-TYPE HIGH-RESISTIVITY FLOAT-ZONE SILICON
Simoen, E. ; Claeys, C. ; Job, R. ; Ulyashin, A.G. ; Fahrner, W.R. ; Tonelli, G. ; Degryse, O. ; Clauws, P.
出版情報: Semiconductor silicon 2002 : proceedings of the ninth International Symposium on Silicon Materials Science and Technology.  pp.912-924,  2002.  Pennington, NJ.  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 2002-2
2.

国際会議録
国際会議録
2. THE BEHAVIOUR OF OXYGEN IN OXYGENATED N-TYPE HIGH-RESISTIVITY FLOAT-ZONE SILICON
Simoen, E. ; Claeys, C. ; Job, R. ; Ulyashin, A.G. ; Fahrner, W.R. ; Tonelli, G. ; Degryse, O. ; Clauws, P.
出版情報: Semiconductor silicon 2002 : proceedings of the ninth International Symposium on Silicon Materials Science and Technology.  pp.912-926,  2002.  Pennington, NJ.  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 2002-2
3.

国際会議録
国際会議録
3. Hydrogen Enhanced Thermal Donor Formation in p-Type Czochralski Silicon with a Denuded Zone
Ulyashin, U.G. ; Petlitskii, A.N. ; Job, R. ; Fahrner, W.R.
出版情報: Proceedings of the Fifth International Symposium on High Purity Silicon V.  pp.211-220,  1998.  Pennington, NJ.  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 98-13
4.

国際会議録
国際会議録
4. Direct Proof of Argon Atoms Incorporated Into High-Purity Silicon Single Crystals During Growth in Argon Gas Ambient
Ulyashin, A.G. ; Job, R. ; Fahrner, W.R. ; Mudryi, A.V. ; Patuk, Al. ; Shakin, I.A.
出版情報: High Purity Silicon VI : proceedings of the sixth International Symposium.  pp.66-76,  2000.  Bellingham, Wash..  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 2000-17
5.

国際会議録
国際会議録
5. Bulk and Surface Properties of Cz Silicon After Hydrogen Plasma
Job, R. ; Ulyashin, AG. ; Fahrner, W.R. ; Markevich, V.P. ; Murin, LI. ; LindstrtSm, J.L. ; Raiko, V. ; Engemann, J.
出版情報: High Purity Silicon VI : proceedings of the sixth International Symposium.  pp.209-222,  2000.  Bellingham, Wash..  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 2000-17
6.

国際会議録
国際会議録
6. Doping Of Oxidized Float Zone Silicon By Thermal Donors - A Low Thermal Budget Doping Method For Device Applications?
Job, R. ; Ulyashin, A.G. ; Huang, Y.L. ; Fahrner, W.R. ; Simoen, E. ; Claeys, C. ; Niedernostheide, F.-J. ; Schulze, H.-J. ; Tonelli, G.
出版情報: Defect and impurity engineered semiconductors and devices III : symposium held April 1-5, 2002, San Francisco, California, U.S.A..  pp.257-262,  2002.  Warrendale, Pa.  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 719
7.

国際会議録
国際会議録
7. Comparative Raman And Tem Analysis Of The Evolution Of Platelet Defects In Plasma Hydrogenated And Annealed Czochralski Silicon
Job, R. ; Beaufort, M.-F. ; Barbot, J.-F. ; Ulyashin, A.G. ; Fahrner, W.R.
出版情報: Defect and impurity engineered semiconductors and devices III : symposium held April 1-5, 2002, San Francisco, California, U.S.A..  pp.217-222,  2002.  Warrendale, Pa.  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 719
8.

国際会議録
国際会議録
8. A Low Temperature Technology on the Base of Hydrogen Enhanced Thermal Donor Formation for Future High-Voltage Applications
Job, R. ; Ulyashin, A.G. ; Fahrner, W.R. ; Niedernostheide, F.J. ; Schulze, H.J. ; Simoen, E. ; Claeys, C.L. ; Tonelli, G.
出版情報: Proceedings of the Eleventh International Workshop on the Physics of Semiconductor Devices : (December 11-15, 2001).  VOL-1  pp.405-413,  2002.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
シリーズ名: Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号: 4746
9.

国際会議録
国際会議録
9. Thermal Evolution of Hydrogen Related Defects in Silicon Investigated by u-Raman Spectroscopy
Ma, Y. ; Huang, Y.L. ; Job, R. ; Fahrner, W.R. ; Beaufort, M.-F. ; Barbot, J. -F.
出版情報: High purity silicon VIII : proceedings of the international symposium.  pp.385-394,  2004.  Pennington, N.J..  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 2004-05
10.

国際会議録
国際会議録
10. μ-Raman Spectra Analysis of the Evolution of Hydrogen Related Defects and Void Formation in the Silicon Ion-Cut Process
Dungen, W. ; Job, R. ; Ma, Y. ; Huang, Y.L. ; Fahrner, W.R. ; Keller, L.O. ; Horstmann, J.T.
出版情報: Semiconductor defect engineering - materials, synthetic structures and devices : symposium held March 28-April 1, 2005, San Francisco, California, U.S.A..  pp.503-508,  2005.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 864