1.

国際会議録
国際会議録
1. Chloride-Based CVD at High Rates of 4H-SiC on On-Axis Si-Face Substrates
S. Leone ; Y.C. Lin ; F.C. Beyer ; S. Andersson ; H. Pedersen
出版情報: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.59-62,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 679-680
2.

国際会議録
国際会議録
2. Defects in 4H-SiC Layers Grown by Chloride-Based Epitaxy
F.C. Beyer ; H. Pedersen ; A. Henry ; E. Janzen
出版情報: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.373-376,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 615-617
3.

国際会議録
国際会議録
3. Chloride-Based SiC Epitaxial Growth
H. Pedersen ; S. Leone ; A. Henry ; F.C. Beyer ; A. Lundskog
出版情報: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.89-92,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 615-617
4.

国際会議録
国際会議録
4. Electrical and Optical Properties of High-Purity Epilayers Grown by the Low-Temperature Chloro-Carbon Growth Method
S.P. Kotamraju ; B. Krishnan ; F.C. Beyer ; A. Henry ; O. Kordina
出版情報: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.129-132,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 717-720
5.

国際会議録
国際会議録
5. Chloride-Based CVD of 4H-SiC at High Growth Rates on Substrates with Different Off-Angles
S. Leone ; H. Pedersen ; F.C. Beyer ; S. Andersson ; O. Kordina
出版情報: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.113-116,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 717-720
6.

国際会議録
国際会議録
6. Electronic Configuration of Tungsten in 4H-, 6H-, and 15R-SiC
A. Gällström ; B. Magnusson ; F.C. Beyer ; A. Gali ; N.T. Son
出版情報: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.211-216,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 717-720
7.

国際会議録
国際会議録
7. Observation of Bistable Defects in Electron Irradiated N-Type 4H-SiC
F.C. Beyer ; C. Hemmingsson ; H. Pedersen ; A. Henry ; J. Isoya
出版情報: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.249-252,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 679-680
8.

国際会議録
国際会議録
8. Contact-Less Electrical Defect Characterization of Semi-Insulating 6H-SiC Bulk Material
S. Hahn ; F.C. Beyer ; A. Gällström ; P. Carlsson ; A. Henry
出版情報: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.405-408,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 600-603
9.

国際会議録
国際会議録
9. Metastable Defects in Low-Energy Electron Irradiated n-Type 4H-SiC
F.C. Beyer ; C. Hemmingsson ; H. Pedersen ; A. Henry ; J. Isoya
出版情報: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.435-438,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 645-648
10.

国際会議録
国際会議録
10. Very High Growth Rate of 4H-SiC Using MTS as Chloride-Based Precursor
H. Pedersen ; S. Leone ; A. Henry ; F.C. Beyer ; V. Darakchieva
出版情報: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.115-118,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 600-603