Materials and Processes for High k Gate Stacks: Results from the FEP Tzansition Center
- 著者名:
- 掲載資料名:
- Physics and technology of high-k gate dielectrics 4
- シリーズ名:
- ECS transactions
- シリーズ巻号:
- 3(3)
- 発行年:
- 2006
- 開始ページ:
- 389
- 終了ページ:
- 416
- 総ページ数:
- 28
- 出版情報:
- Pennington, N.J.: Electrochemical Society
- ISSN:
- 19385862
- ISBN:
- 9781566775038 [1566775035]
- 言語:
- 英語
- 請求記号:
- E23400/3-3
- 資料種別:
- 国際会議録
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