1.

国際会議録
国際会議録
1. SINGLE STEP LOW TEMPERATURE IN-SITU SUBSTRATE CLEANING FOR SILICON PROCESSING
Ramm, Juergen ; Beck, Eugen ; Steiner, Franz-Peter ; Pixley, Ralph E. ; Eisele, Ignaz
出版情報: Chemical surface preparation, passivation, and cleaning for semiconductor growth and processing : symposium held April 27-29, 1992, San Francisco, California, U.S.A..  pp.249-254,  1992.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 259
2.

国際会議録
国際会議録
2. Thermally Grown and Reoxidized Nitrides as Alternative Gate Dielectrics
Ludsteck, Alexandra ; Dietl, Waltraud ; Chung, Hinyiu ; Schulze, Joerg ; Nenyei, Zsolt ; Eisele, Ignaz
出版情報: Fundamentals of novel oxide/semiconductor interfaces : symposium held December 1-4, 2003, Boston, Massachusetts, U.S.A..  pp.245-250,  2004.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 786
3.

国際会議録
国際会議録
3. DRY HYDROGEN PLASMA CLEANING FOR LOCAL EPITAXIAL GROWTH
Ramm, Juergen ; Beck, Eugen ; Eisele, Ignaz ; Hansch, Walter ; Klepser, Bernd-Ulrich ; Senn, Hans
出版情報: Surface chemical cleaning and passivation for semiconductor processing.  pp.91-,  1993.  Pittsburgh, PA.  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 315