1.

国際会議録
国際会議録
1. Positron annihtlation and scanning tunneling microscopy used to characterise defects in highly Si-doped GaAs.(Invited)
Gebauer,J. ; Krause-Rehberg,R. ; Domke,C. ; Ebert,Ph. ; Urban,K.
出版情報: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part2  pp.885-892,  1997.  Zurich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 258-263
2.

国際会議録
国際会議録
2. Combination of Positron Annihilation and Scanning Tunneling Microscopy:A Unique Approach to Characterize Defects
Gebauer,J. ; Krause-Rehber,R. ; Domke,C. ; Ebert,Ph. ; Urban,K.
出版情報: Positron annihilation, ICPA-11 : Proceedings of the 11th International Conference on Positron Annihilation, Kansas City, Missouri, USA, May 1997.  pp.494-496,  1997.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 255-257