Stimulated THz Emission of Strained p-Ge and SiGe/Si Quantum-Well Structures Doped with Shallow Acceptors.

Stimulated THz Emission of Strained p-Ge and SiGe/Si Quantum-Well Structures Doped with Shallow Acceptors.

著者名:

掲載資料名:

SiGe and Ge, materials, processing, and devices

シリーズ名:

ECS transactions

シリーズ巻号:

3(7)

発行年:

2006

開始ページ:

745

終了ページ:

757

総ページ数:

13

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566775076 [1566775078]

言語:

英語

請求記号:

E23400/3-7

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00047115
シリーズID:	PA00000034
会議名:	SiGe and Ge Materials, Processing, and Devices Symposium ; Joint International Electrochemical Society Meeting ; Meeting of the Electrochemical Society ; Congreso de la Sociedad Mexicana de Electroquimica
回次:	2nd ; 2006 ; 210th ; 21st
会議開催地:	Cancun, Mexico
会議開催年:	2006.10.29-2006.11.03
論文注記:	210th ECS Meeting, October 29-November 3, 2006, Cancun, Mexico

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2 国際会議録 Shallow Acceptor States iu SiGe Quantum Wells Kagan,M.S., Altukhov,I.V., Korolev,K.A., Orlov,D.V., Sinis,V.P., Thomas,S.G., Wang,K.L., Schmalz,K., Yassievich,I.N. Trans Tech Publications	8 国際会議録 Weak Localization in SiGe Quantum Wells Doped with Boron Zobl, R., Gornik, E., Altukhov, I.V., Zhdanova, N.G., Landsberg, E.G., Korolev, K.A., Kagan, M.S. Trans Tech Publications
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4 国際会議録 Acceptor states in boron doped SiGe quantum wells Schmalz,K., Kagan,M.S., Altukhov,I.V., Korolev,K.A., Orlov,D.V., Sinis,V.P., Tomas,S.G., Wang,K.L., Yassievich,I.N. Trans Tech Publications	10 国際会議録 THZ lasing of strained p-Ge and Si/Ge structures. Kagan, M. S. Kluwer Academic Publishers
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