(3.5) 5:00 - 5:20 PM - Mobility Enhancement in Compressively Strained SiGe Surface Channel pMOS(FET) with HfO2/TiN Gate Stack
- 著者名:
Jin, B. Datta, S. Dewey, G. Doczy, M. Doyle, B.S. Johnson, K. Kavalieros, J. Metz, M. Zelick, N. Chau, R.(Intel) - 掲載資料名:
- SiGe: materials, processing, and devices : proceedings of the First international symposium
- シリーズ名:
- Electrochemical Society Proceedings Series
- シリーズ巻号:
- 2004-07
- 発行年:
- 2004
- 開始ページ:
- 111
- 終了ページ:
- 122
- 総ページ数:
- 12
- 出版情報:
- Pennington, N.J.: Electrochemical Society
- ISSN:
- 01616374
- ISBN:
- 9781566774208 [1566774209]
- 言語:
- 英語
- 請求記号:
- E23400/200407
- 資料種別:
- 国際会議録
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