1.

国際会議録
国際会議録
1. Structural Improvement of Seeds for Bulk Crystal Growth by Using Hot-Wall CVD of 4H-SiC
Wagner, G. ; Schulz, D. ; Doerschel, J.
出版情報: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.109-112,  2005.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 483-485
2.

国際会議録
国際会議録
2. Effect of Nitrogen Doping on the Formation of Planar Defects in 4H-SiC
Siche, D. ; Albrecht, M. ; Doerschel, J. ; Irmscher, K. ; Rost, H. J. ; Rossberg, M. ; Schulz, D.
出版情報: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.39-42,  2005.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 483-485
3.

国際会議録
国際会議録
3. Investigation of Silicon Carbide Physical Vapor Transport Growth on the C-Terminated Face of 6H Seeds
Schulz, D. ; Doerschel, J. ; Irmscher, K. ; Rost, H.-J. ; Siche, D. ; Wollweber, J.
出版情報: Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 640
4.

国際会議録
国際会議録
4. Macrodefect Generation in SiC Single Crystals Caused by Polytype Changes
Rost, H.-J. ; Doerschel, J. ; Schulz, D. ; Siche, D. ; Wollweber, J.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.67-70,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
5.

国際会議録
国際会議録
5. Morphological Features of Sublimation-Grown 4H-SiC Layers
Schulz, D. ; Doerschel, J.
出版情報: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.95-98,  2003.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 433-436
6.

国際会議録
国際会議録
6. Properties of Nitrogen-Doped 4H-SiC Single Crystals Grown by Physical Vapor Transport
Rost, H.-J. ; Irmscher, K. ; Doerschel, J. ; Siche, D. ; Schulz, D. ; Wollweber, J.
出版情報: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.91-94,  2003.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 433-436
7.

国際会議録
国際会議録
7. Growth Related Distribution of Secondary Phase Inclusions in 6H-SiC Single Crystals
Rost, H.-J. ; Dolle, J. ; Doerschel, J. ; Siche, D. ; Schulz, D. ; Wollweber, J.
出版情報: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.29-32,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 353-356
8.

国際会議録
国際会議録
8. Macrodefect Generation in SiC Single Crystals Caused by Polytype Changes
Rost, H.-J. ; Doerschel, J. ; Schulz, D. ; Siche, D. ; Wollweber, J.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.67-70,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393