1.

国際会議録
国際会議録
1. Transport Properties of In0.53Ga0.47 As Layers Grown From Er Containing Melts
Dhar,S. ; Paul,Shampa
出版情報: Proceedings of the Tenth International Workshop on the Physics of Semiconductor Devices (December 14-18, 1999).  Part1  pp.219-221,  2000.  Bellingham, Wash..  SPIE - The International Society for Optical Engineering
シリーズ名: Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号: 3975
2.

国際会議録
国際会議録
2. Hall Effect and Photocapacitance Measurements on the SbGa Electron Trap Created in GaAs1-xSbx(x｡？.02)Layers Grown by Liquid Phase Epitaxy
Dhar,S. ; Mazumdar,M.
出版情報: Proceedings of the Tenth International Workshop on the Physics of Semiconductor Devices (December 14-18, 1999).  Part1  pp.222-225,  2000.  Bellingham, Wash..  SPIE - The International Society for Optical Engineering
シリーズ名: Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号: 3975
3.

国際会議録
国際会議録
3. Current Components in a CU2S/Porous Si Junction
Chakrabarti,Shubhananda ; Dhar,S.
出版情報: Proceedings of the Tenth International Workshop on the Physics of Semiconductor Devices (December 14-18, 1999).  Part2  pp.1131-1133,  2000.  Bellingham, Wash..  SPIE - The International Society for Optical Engineering
シリーズ名: Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号: 3975
4.

国際会議録
国際会議録
4. Erbium Doped InGaAs Layers Grown by Liquid Phase Epitaxy
Paul,S. ; Mazumdar,M. ; Dhar,S. ; Banerjee,S.
出版情報: Semiconductor Devices.  pp.330-334,  1996.  Bellingham, WA, New Delhi.  SPIE-The International Society for Optical Engineering — Narosa
シリーズ名: Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号: 2733
5.

国際会議録
国際会議録
5. Ohmic Contacts to Porous Silicon by Electroless Nickel Plating
Chakrabarti,S. ; Dhar,S.
出版情報: Semiconductor Devices.  pp.588-590,  1996.  Bellingham, WA, New Delhi.  SPIE-The International Society for Optical Engineering — Narosa
シリーズ名: Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号: 2733