1.

国際会議録
国際会議録
1. Theory of the optical absorption and of the magnetic circular dichroism of antisite related defects in GaAs
Lannoo,M. ; Delerue,C. ; Allan,G.
出版情報: Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991.  Pt.2  pp.865-874,  1992.  Zurich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 83-87
2.

国際会議録
国際会議録
2. Intrinsic defects in electron irradiated p-type GaAs
Jia,Y.Q. ; Bardeleben,H.J.von ; Stievenard,D. ; Delerue,C.
出版情報: Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991.  Pt.2  pp.965-970,  1992.  Zurich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 83-87
3.

国際会議録
国際会議録
3. Energy levels associated with the metastable state of EL2
Stievenard,D. ; Delerue,C. ; Bremond,G. ; Guillot,G. ; Azoulay,R. ; Bardeleben,H.J.von ; Bourgoin,J.C. ; Portal,J.C. ; Ranz,E.
出版情報: Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991.  Pt.2  pp.911-916,  1992.  Zurich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 83-87
4.

国際会議録
国際会議録
4. Coexistence of deep and shallow paramagnetic excited states of the DX center in GaAlAs
Bardeleben,H.J.von ; Sheinkmann,M. ; Delerue,C. ; Lannoo,M.
出版情報: Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991.  Pt.2  pp.787-792,  1992.  Zurich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 83-87
5.

国際会議録
国際会議録
5. The Electron Irradiation Induced Defect E1,E2 in GaAs:Arsenic Frenkel Pair Versus Displaced Arsenic Antisite Model
Bardeleben,H.J.von ; Delerue,C. ; Stievenard,D.
出版情報: Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993.  Pt.1  pp.223-228,  1994.  Zurich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 143-147
6.

国際会議録
国際会議録
6. Screening of the Coulomb Interaction and Transition Metal Energy Levels Pinning to the Semiconductor Neutrality Level
Langer,J.M. ; Delerue,C. ; Lannoo,M.
出版情報: Proceedings of the 15th International Conference on Defects in Semiconductors : Budapest, Hungary, August 22-26, 1988.  Part1  pp.275-280,  1989.  Aederlmannsdorf, Switzwelns.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 38-41
7.

国際会議録
国際会議録
7. The Relative Importance of Radiative and Non Radiative Recombinations in the Luminescence of Porous Silicon
Delerue,C. ; Lannoo,M. ; Allan,G.
出版情報: Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993.  Pt.3  pp.1463-1468,  1994.  Zurich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 143-147
8.

国際会議録
国際会議録
8. The Theory of Rare-Earth Impurities in Semiconductors
Delerue,C. ; Lannoo,M.
出版情報: Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993.  Pt.2  pp.699-706,  1994.  Zurich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 143-147
9.

国際会議録
国際会議録
9. Theory of substitutional rare earth impurities in semiconductors
Delerue,C. ; Lannoo,M.
出版情報: Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991.  Pt.2  pp.659-664,  1992.  Zurich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 83-87
10.

国際会議録
国際会議録
10. Role of silicon molecules and crystallites in the luminescence of porous silicon
Delerue,C. ; Allan,G. ; Lannoo,M.
出版情報: Optical properties of low dimensional silicon structures.  pp.229-234,  1993.  Dordrecht.  Kluwer Academic Publishers
シリーズ名: NATO ASI series. Series E, Applied sciences
シリーズ巻号: 244