1.

国際会議録
国際会議録
1. LP-MOCVD Growth of GaAlN/GaN Heterostructures on Silicon Carbide: Application to HEMT's Devices
Di Forte Poisson, M-A. ; Magis, M. ; Tordjman, M. ; Aubry, R. ; Pesohang, M. ; Delage, S.L. ; Persio, J. Di ; Grimbert, B. ; Hoel, V. ; Delos, E. ; Ducatteau, D. ; Gaquiere, C.
出版情報: GaN and related alloys - 2003 : symposium held December 1-5, 2003, Boston, Massachusetts, U.S.A..  pp.107-112,  2004.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 798
2.

国際会議録
国際会議録
2. BORON DOPING IN Si-MBE
Eberl, K. ; Iyer, S.S. ; Delage, S.L. ; Ek, B.A. ; Cotte, J.M.
出版情報: Silicon molecular beam epitaxy : symposium held April 29-May 3, 1991, Anaheim, California, U.S.A..  pp.121-128,  1991.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 220
3.

国際会議録
国際会議録
3. Thermal Characterisation of AlGaN/GaN HEMTs using Micro-Raman Scattering Spectroscopy and Pulsed I-V Measurements
Aubry, R. ; Jacquet, J.C. ; Dua, C. ; Gerard, H. ; Dessertenne, B. ; di Forte-Poisson, M.A. ; Cordier, Y. ; Delage, S.L.
出版情報: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1625-1628,  2004.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 457-460
4.

国際会議録
国際会議録
4. Thermal Behavior of Ohmic Contacts for GaInP/GaAs HBTs
Cassette, S. ; Delage, S.L. ; Blanck, H. ; Chartier, E. ; Florid, D. ; DiForte-Poisson, M.A. ; Chevalier, S. ; Furlan, G.S.
出版情報: Proceedings of the Symposium on Wide Bandgap Semiconductors and Devices and the Twenty-Third State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIII).  pp.480-486,  1995.  Pennington, NJ.  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 95-21