1.

国際会議録
国際会議録
1. Impact of High-k Properties on MOSFET Electrical Characteristics
Pantisano, Ll. ; Ragnarsson, L. -A. ; Houssa, M. ; Degraeve, R. ; Groeseneken, G. ; Schram, T. ; Degendt, S. ; Heyns, M. ; Afanas'ev, V.
出版情報: Defects in high-κ gate dielectric stacks : nano-electronic semiconductor devices.  pp.97-109,  2006.  Dordrecht.  Springer
シリーズ名: NATO science series. Series 2, Mathematics, physics and chemistry
シリーズ巻号: 220
2.

国際会議録
国際会議録
2. INVITED: ELECTRIC STRESS-INDUCED DEGRADATION OF THIN OXIDE LAYERS AND ITS IMPACT ON DEVICE RELIABILITY
Degraeve, R. ; Kaczer, B. ; Roussel, Ph. ; Groeseneken, G.
出版情報: Semiconductor silicon 2002 : proceedings of the ninth International Symposium on Silicon Materials Science and Technology.  pp.475-488,  2002.  Pennington, NJ.  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 2002-2
3.

国際会議録
国際会議録
3. On the Breakdown Statistics and Mechanisms in Ultra-Thin Oxides and Nitrided Oxides
Groeseneken, G. ; Degraeve, R. ; De Blauwe, J. ; Roussel, P. ; Depas, M. ; Maes, H.
出版情報: Proceedings of the Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films.  pp.3-19,  1997.  Pennington, New Jersey.  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 97-10
4.

国際会議録
国際会議録
4. Analysis of Short-channel MOSFET Behavior after Gate Oxide Breakdown and its Impact on Digital Circuit Reliability
Groeseneken, G. ; Kaczer, B. ; Degraeve, R.
出版情報: Silicon nitride and silicon dioxide thin insulating films VII : proceedings of the international symposium.  pp.173-198,  2003.  Pennington, N.J..  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 2003-2
5.

国際会議録
国際会議録
5. Measurement technique, oxide thickness and area dependence of soft-breakdown
Nigam, T. ; Degraeve, R. ; Groeseneken, G. ; Heyns, M. ; Maes, H. E.
出版情報: Structure and electronic properties of ultrathin dielectric films on silicon and related structures : symposium held November 29-December 1, 1999, Boston, Massachusetts, U.S.A..  pp.337-,  2000.  Warrendale, PA.  MRS-Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 592
6.

国際会議録
国際会議録
6. *Impact of temperature and breakdown statistics on reliability predictions for ultrathin oxides
Groeseneken, G. ; Degraeve, R. ; Kaczer, B. ; Maes, H. E.
出版情報: Structure and electronic properties of ultrathin dielectric films on silicon and related structures : symposium held November 29-December 1, 1999, Boston, Massachusetts, U.S.A..  pp.295-,  2000.  Warrendale, PA.  MRS-Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 592
7.

国際会議録
国際会議録
7. On the impact of high-K properties (and defects) on MOSFET el ectrical characteristics (invited paper)
Pantisano, L. ; Afanas'ev, V. ; Ragnarsson, L-A. ; Houssa, M. ; Degraeve, R. ; Groeseneken, G. ; Schram, T. ; DeGendt, S. ; Heyns, M.
出版情報: Crystalline defects and contamination: their impact and control in device manufacturing IV : DECON 2005 : proceedings of the Satellite Symposium to ESSDERC 2005, Grenoble, France.  pp.144-158,  2005.  Pennington, N.J..  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 2005-10
8.

国際会議録
国際会議録
8. Present Reliability Issues in Ultrathin Oxynitride Films
Kaczer, B ; Degraeve, R. ; Arkhipov, V. ; Groeseneken, G.
出版情報: Silicon nitride, silicon dioxide thin insulating films, and other emerging dieletrics VIII : proceedings of the international symposium.  pp.307-326,  2005.  Pennington, N.J..  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 2005-01
9.

国際会議録
国際会議録
9. (10.2) 1:45 -2:15 PM - GermaniumDeep-sub micron PMOS Transistors with Etched TaN Metal Gate on a High-K Dielectric, Fabricated in a 200mm Prototyping Line (Invited)
De Jaeger, M. Meuris B. ; Kubicek, S. ; Verheyena, P. ; Van Steenbergen, J. ; Lujan, G. ; Kunnen, E. ; Sleeckx, E. ; Teerlinck, I. ; Van Elshocht, S. ; Delabie, A. ; Lindsay, R. ; Satta, A. ; Schram, T. ; Chiarella, T. ; Degraeve, R. ; Richard, O.
出版情報: SiGe: materials, processing, and devices : proceedings of the First international symposium.  pp.693-700,  2004.  Pennington, N.J..  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 2004-07
10.

国際会議録
国際会議録
10. INVITED: ELECTRIC STRESS-INDUCED DEGRADATION OF THIN OXIDE LAYERS AND ITS IMPACT ON DEVICE RELIABILITY
Degraeve, R. ; Kaczer, B. ; Roussel, Ph. ; Groeseneken, G.
出版情報: Semiconductor silicon 2002 : proceedings of the ninth International Symposium on Silicon Materials Science and Technology.  pp.475-488,  2002.  Pennington, NJ.  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 2002-2