1.

国際会議録
国際会議録
1. Growth and Characterization of 4H-SiC MESFET Structures Grown by Hot-Wall CVD
Forsberg, U. ; Henry, A. ; Danielsson, Oe. ; Rorsman, N. ; Eriksson, J. ; Wahab, Q. ; Storasta, L. ; Linnarsson, M.K. ; Janzen, E.
出版情報: Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 640
2.

国際会議録
国際会議録
2. Epitaxial Growth of 4H-SiC in a Vertical Hot-Wall CVD Reactor: Comparison between Up- and Down-Flow Orientations
Zhang, J. ; Ellison, A. ; Danielsson, Oe. ; Henry, A. ; Janzen, E.
出版情報: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.91-94,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 353-356
3.

国際会議録
国際会議録
3. Enlarging the Usable Growth Area in a Hot-Wall Silicon Carbide CVD Reactor by Using Simulation
Danielsson, Oe. ; Forsberg, U. ; Henry, A. ; Janzen, E.
出版情報: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.99-102,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 353-356